In semiconductor spintronics, electron spin rather than charge is the key property. This paper describes several spin-related devices using spin-orbit interaction. We have experimentally confirmed that the spin-orbit interaction in a semiconductor two-dimensional electron gas channel can be controlled by a gate voltage. This is the first step towards the creation of functional spin devices. The operating principles of a spin field effect transistor, a spin filter, and a spin interference device are discussed.
|Number of pages||6|
|Journal||NTT Technical Review|
|Publication status||Published - 2004 Jun 1|
ASJC Scopus subject areas
- Computer Science Applications
- Computer Networks and Communications
- Electrical and Electronic Engineering