New Semiconductor-on-Low-K Substrate Technology has been proposed to fabricate SOI-MOSFET with low-K substrate and GOI-MOSFET with low-K substrate. These MOSFET's are called SOLKMOSFET and GOLK-MISFET. SOLK-MOSFET with metal backgate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. In order to investigate the possibilities of GOLK-MISFETs, we fabricated Ge MISFETs with HfO2 gate dielectric and W/W2N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. We obtained the excellent drain current-voltage characteristics and subthreshold characteristics in fabricated GOI-MISFETs with the gate length of 2.3 μm.