TY - GEN
T1 - Semiconductor-on-Low-K Substrate Technology
AU - Tanaka, Tetsu
AU - Yamada, Yusuke
AU - Park, Mungi
AU - Fukushima, Takafumi
AU - Koyanagi, Mitsumasa
PY - 2006/9/29
Y1 - 2006/9/29
N2 - New Semiconductor-on-Low-K Substrate Technology has been proposed to fabricate SOI-MOSFET with low-K substrate and GOI-MOSFET with low-K substrate. These MOSFET's are called SOLKMOSFET and GOLK-MISFET. SOLK-MOSFET with metal backgate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. In order to investigate the possibilities of GOLK-MISFETs, we fabricated Ge MISFETs with HfO2 gate dielectric and W/W2N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. We obtained the excellent drain current-voltage characteristics and subthreshold characteristics in fabricated GOI-MISFETs with the gate length of 2.3 μm.
AB - New Semiconductor-on-Low-K Substrate Technology has been proposed to fabricate SOI-MOSFET with low-K substrate and GOI-MOSFET with low-K substrate. These MOSFET's are called SOLKMOSFET and GOLK-MISFET. SOLK-MOSFET with metal backgate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. In order to investigate the possibilities of GOLK-MISFETs, we fabricated Ge MISFETs with HfO2 gate dielectric and W/W2N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. We obtained the excellent drain current-voltage characteristics and subthreshold characteristics in fabricated GOI-MISFETs with the gate length of 2.3 μm.
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M3 - Conference contribution
AN - SCOPUS:33748978421
SN - 1566774373
SN - 9781566774376
T3 - Proceedings - Electrochemical Society
SP - 297
EP - 301
BT - Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006
T2 - 5th International Conference on Semiconductor Technology, ISTC 2006
Y2 - 21 March 2006 through 23 March 2006
ER -