Semiconductor-on-Low-K Substrate Technology

Tetsu Tanaka, Yusuke Yamada, Mungi Park, Takafumi Fukushima, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution


New Semiconductor-on-Low-K Substrate Technology has been proposed to fabricate SOI-MOSFET with low-K substrate and GOI-MOSFET with low-K substrate. These MOSFET's are called SOLKMOSFET and GOLK-MISFET. SOLK-MOSFET with metal backgate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. In order to investigate the possibilities of GOLK-MISFETs, we fabricated Ge MISFETs with HfO2 gate dielectric and W/W2N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. We obtained the excellent drain current-voltage characteristics and subthreshold characteristics in fabricated GOI-MISFETs with the gate length of 2.3 μm.

Original languageEnglish
Title of host publicationProceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006
Number of pages5
Publication statusPublished - 2006 Sep 29
Event5th International Conference on Semiconductor Technology, ISTC 2006 - Shanghai, China
Duration: 2006 Mar 212006 Mar 23

Publication series

NameProceedings - Electrochemical Society
VolumePV 2006-03


Other5th International Conference on Semiconductor Technology, ISTC 2006

ASJC Scopus subject areas

  • Engineering(all)


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