Semiconductor-on-Low-K Substrate Technology

Tetsu Tanaka; Yusuke Yamada; Mungi Park; Takafumi Fukushima; Mitsumasa Koyanagi

Semiconductor-on-Low-K Substrate Technology

Tetsu Tanaka, Yusuke Yamada, Mungi Park, Takafumi Fukushima, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

New Semiconductor-on-Low-K Substrate Technology has been proposed to fabricate SOI-MOSFET with low-K substrate and GOI-MOSFET with low-K substrate. These MOSFET's are called SOLKMOSFET and GOLK-MISFET. SOLK-MOSFET with metal backgate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. In order to investigate the possibilities of GOLK-MISFETs, we fabricated Ge MISFETs with HfO₂ gate dielectric and W/W₂N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. We obtained the excellent drain current-voltage characteristics and subthreshold characteristics in fabricated GOI-MISFETs with the gate length of 2.3 μm.

Original language	English
Title of host publication	Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006
Pages	297-301
Number of pages	5
Publication status	Published - 2006 Sep 29
Event	5th International Conference on Semiconductor Technology, ISTC 2006 - Shanghai, China Duration: 2006 Mar 21 → 2006 Mar 23

Publication series

Name	Proceedings - Electrochemical Society
Volume	PV 2006-03

Other

Other	5th International Conference on Semiconductor Technology, ISTC 2006
Country	China
City	Shanghai
Period	06/3/21 → 06/3/23

ASJC Scopus subject areas

Engineering(all)

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Tanaka, T., Yamada, Y., Park, M., Fukushima, T., & Koyanagi, M. (2006). Semiconductor-on-Low-K Substrate Technology. In Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006 (pp. 297-301). (Proceedings - Electrochemical Society; Vol. PV 2006-03).

Semiconductor-on-Low-K Substrate Technology. / Tanaka, Tetsu; Yamada, Yusuke; Park, Mungi; Fukushima, Takafumi; Koyanagi, Mitsumasa.

Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006. 2006. p. 297-301 (Proceedings - Electrochemical Society; Vol. PV 2006-03).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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title = "Semiconductor-on-Low-K Substrate Technology",

abstract = "New Semiconductor-on-Low-K Substrate Technology has been proposed to fabricate SOI-MOSFET with low-K substrate and GOI-MOSFET with low-K substrate. These MOSFET's are called SOLKMOSFET and GOLK-MISFET. SOLK-MOSFET with metal backgate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. In order to investigate the possibilities of GOLK-MISFETs, we fabricated Ge MISFETs with HfO2 gate dielectric and W/W2N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. We obtained the excellent drain current-voltage characteristics and subthreshold characteristics in fabricated GOI-MISFETs with the gate length of 2.3 μm.",

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AU - Tanaka, Tetsu

AU - Yamada, Yusuke

AU - Park, Mungi

AU - Fukushima, Takafumi

AU - Koyanagi, Mitsumasa

PY - 2006/9/29

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N2 - New Semiconductor-on-Low-K Substrate Technology has been proposed to fabricate SOI-MOSFET with low-K substrate and GOI-MOSFET with low-K substrate. These MOSFET's are called SOLKMOSFET and GOLK-MISFET. SOLK-MOSFET with metal backgate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. In order to investigate the possibilities of GOLK-MISFETs, we fabricated Ge MISFETs with HfO2 gate dielectric and W/W2N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. We obtained the excellent drain current-voltage characteristics and subthreshold characteristics in fabricated GOI-MISFETs with the gate length of 2.3 μm.

AB - New Semiconductor-on-Low-K Substrate Technology has been proposed to fabricate SOI-MOSFET with low-K substrate and GOI-MOSFET with low-K substrate. These MOSFET's are called SOLKMOSFET and GOLK-MISFET. SOLK-MOSFET with metal backgate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. In order to investigate the possibilities of GOLK-MISFETs, we fabricated Ge MISFETs with HfO2 gate dielectric and W/W2N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. We obtained the excellent drain current-voltage characteristics and subthreshold characteristics in fabricated GOI-MISFETs with the gate length of 2.3 μm.

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