Semiconductor-metal transition and band-gap tuning in quasi-free-standing epitaxial bilayer graphene on SiC

Katsuaki Sugawara, Takafumi Sato, Kohei Kanetani, Takashi Takahashi

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

We have performed angle-resolved photoemission spectroscopy of quasi-free-standing bilayer graphene epitaxially grown on silicon carbide. Prepared bilayer graphene shows a semiconducting behavior with a finite energy gap at the Fermi level in contrast to the theoretical prediction. We found that potassium-deposition on the sample leads to the semiconductor-to-metal transition together with the enhancement of the gap energy between the π and π* bands. The observed controllable tuning of the Fermi-level position and the gap energy provides an important step toward the band-gap engineering with bilayer graphene.

Original languageEnglish
Article number024705
Journaljournal of the physical society of japan
Volume80
Issue number2
DOIs
Publication statusPublished - 2011 Feb

Keywords

  • Band gap
  • Bilayer graphene
  • Hydrogen
  • Potassium

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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