Semiconductor laser based, injection locking was performed for efficient excitation of subjects. The linewidth of the master laser was extended to 380 MHz by using a frequency modulation technique through a direct current modulation. By the injection locking technique with a broad-area semiconductor laser, the frequency modulated input was amplified to 610 mW, faithfully maintaining the broadened linewidth and the spectral shape. This result means that a compact high power laser system is possible with broad linewidth that is precisely controllable.
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