Semiconductor laser based, injection locking maintaining broad linewidth generated by a direct current modulation of a master laser

Kohta Sasaki, Toshio Yoneyama, Takahiro Nakamura, Shunichi Sato, Akinori Takeyama

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Semiconductor laser based, injection locking was performed for efficient excitation of subjects. The linewidth of the master laser was extended to 380 MHz by using a frequency modulation technique through a direct current modulation. By the injection locking technique with a broad-area semiconductor laser, the frequency modulated input was amplified to 610 mW, faithfully maintaining the broadened linewidth and the spectral shape. This result means that a compact high power laser system is possible with broad linewidth that is precisely controllable.

Original languageEnglish
Article number096107
JournalReview of Scientific Instruments
Volume77
Issue number9
DOIs
Publication statusPublished - 2006 Oct 9

ASJC Scopus subject areas

  • Instrumentation

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