TY - JOUR
T1 - Semiconductor external modulators for 2.5 Gb/s optical transmission using selective growth by MOVPE
AU - Komatsu, Keiro
AU - Kitamura, Shotaro
AU - Kato, Tomoaki
AU - Yamaguchi, Masayuki
AU - Takano, Shinji
AU - Shimizu, Haruhito
AU - Watanabe, Nobutaka
AU - Kosuge, Kazuhiro
AU - Kitamura, Mitsuhiro
PY - 1994/6
Y1 - 1994/6
N2 - External modulators, which have smaller chirping characteristics than laser diode direct modulation, are desired for high-speed and long-distance optical fiber communication systems. We have developed InGaAsP/InP buried-hetero Franz-Keldysh type optical modulators suitable for practical use in 1.55 μm-2.5 Gb/s long-haul optical transmission systems. A novel fabrication method using the selective growth technique by metal-organic vapor phase epitaxy was implemented for the modulator fabrication. Since semiconductor etching is no longer required for narrow mesa stripe fabrication, the selective growth technique provides a simple fabrication process with highly accurate device dimension control. The fabricated modulators have been packaged, and fiber-pigtailed modulators with 8.1 dB fiber-to-fiber insertion loss, more than 13.4 dB extinction ratio at 3 V, and 3.7 GHz modulation bandwidth have been achieved. Normal fiber 120 km transmission at 2.5 Gb/s signal speed and 1.55 μm wavelength with power penalty less than 0.9 dB, using the packaged modulator, has been demonstrated. Moreover, excellent device reproducibility has been experimentally confirmed and a preliminary reliability check has been carried out.
AB - External modulators, which have smaller chirping characteristics than laser diode direct modulation, are desired for high-speed and long-distance optical fiber communication systems. We have developed InGaAsP/InP buried-hetero Franz-Keldysh type optical modulators suitable for practical use in 1.55 μm-2.5 Gb/s long-haul optical transmission systems. A novel fabrication method using the selective growth technique by metal-organic vapor phase epitaxy was implemented for the modulator fabrication. Since semiconductor etching is no longer required for narrow mesa stripe fabrication, the selective growth technique provides a simple fabrication process with highly accurate device dimension control. The fabricated modulators have been packaged, and fiber-pigtailed modulators with 8.1 dB fiber-to-fiber insertion loss, more than 13.4 dB extinction ratio at 3 V, and 3.7 GHz modulation bandwidth have been achieved. Normal fiber 120 km transmission at 2.5 Gb/s signal speed and 1.55 μm wavelength with power penalty less than 0.9 dB, using the packaged modulator, has been demonstrated. Moreover, excellent device reproducibility has been experimentally confirmed and a preliminary reliability check has been carried out.
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M3 - Article
AN - SCOPUS:0028449088
VL - 9
SP - 241
EP - 250
JO - Optoelectronics - Devices and Technologies
JF - Optoelectronics - Devices and Technologies
SN - 0912-5434
IS - 2
ER -