Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser

Ling Han Li, Ryo Takigawa, Akio Higo, Masanori Kubota, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.

    Original languageEnglish
    Title of host publicationIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
    Pages230-233
    Number of pages4
    DOIs
    Publication statusPublished - 2009 Oct 2
    EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
    Duration: 2009 May 102009 May 14

    Publication series

    NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
    ISSN (Print)1092-8669

    Other

    OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
    Country/TerritoryUnited States
    CityNewport Beach, CA
    Period09/5/1009/5/14

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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