A practical wide bandgap was induced in bilayer graphene using a perpendicular electric field. A self-assembled gate insulator was used to apply a large electric field. The wide bandgap allows the operation of fundamental logic gates composed of bilayer graphene transistors. The results reviewed here indicate the potential for graphene electronics to be realized as emerging transistors with an atomically thin semiconductor.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films