Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics

K. Tsukagoshi, S. L. Li, H. Miyazaki, A. Aparecido-Ferreira, S. Nakaharai

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A practical wide bandgap was induced in bilayer graphene using a perpendicular electric field. A self-assembled gate insulator was used to apply a large electric field. The wide bandgap allows the operation of fundamental logic gates composed of bilayer graphene transistors. The results reviewed here indicate the potential for graphene electronics to be realized as emerging transistors with an atomically thin semiconductor.

Original languageEnglish
Article number094003
JournalJournal of Physics D: Applied Physics
Volume47
Issue number9
DOIs
Publication statusPublished - 2014 Mar 5
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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