TY - JOUR
T1 - Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics
AU - Tsukagoshi, K.
AU - Li, S. L.
AU - Miyazaki, H.
AU - Aparecido-Ferreira, A.
AU - Nakaharai, S.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014/3/5
Y1 - 2014/3/5
N2 - A practical wide bandgap was induced in bilayer graphene using a perpendicular electric field. A self-assembled gate insulator was used to apply a large electric field. The wide bandgap allows the operation of fundamental logic gates composed of bilayer graphene transistors. The results reviewed here indicate the potential for graphene electronics to be realized as emerging transistors with an atomically thin semiconductor.
AB - A practical wide bandgap was induced in bilayer graphene using a perpendicular electric field. A self-assembled gate insulator was used to apply a large electric field. The wide bandgap allows the operation of fundamental logic gates composed of bilayer graphene transistors. The results reviewed here indicate the potential for graphene electronics to be realized as emerging transistors with an atomically thin semiconductor.
UR - http://www.scopus.com/inward/record.url?scp=84894450583&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894450583&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/47/9/094003
DO - 10.1088/0022-3727/47/9/094003
M3 - Article
AN - SCOPUS:84894450583
VL - 47
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 9
M1 - 094003
ER -