Self-stopping selective-oxidation process of AlAs

Takashi Yoshikawa, Hideaki Saito, Hideo Kosaka, Yoshimasa Sugimoto, Kenichi Kasahara

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Self-stopping, selective oxidation of AlAs was demonstrated. Lateral oxidation was stopped where the thickness of AlAs was decreased from 30 to 15 nm because of the large stress arising from the layer boundary of the oxidized AlAs and the surrounding GaAs. The thickness could be varied without degrading the wafer quality by in situ selective growth using the masked molecular beam epitaxy method, which will be available to make oxidized vertical cavity surface emitting lasers uniformly and repeatedly.

Original languageEnglish
Pages (from-to)2310-2312
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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