Self-seeding crystallization of silicon thin films using continuous-wave laser

Shin Ichiro Kuroki, Shuntaro Fujii, Koji Kotani, Takashi Ito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low temperature crystallization of amorphous silicon thin films using continuous-wave laser was investigated. An overlapping of laser beam exposure enhanced the crystallization of a polycrystalline Si thin film, and the silicon crystal nucleus grew its size laterally. A laser beam spot had an elliptical shape for a gradual slope of temperature in a laser irradiated region, and was elongated to a scanning direction. The elongated laser spot with a gradual slope of temperature made a crystallization time longer. Consequently, a two dimensional lateral crystallization of (100) well-oriented Si thin films was achieved. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationSolid-State Joint Posters (General)
Pages71-75
Number of pages5
Edition10
DOIs
Publication statusPublished - 2007
Event209th ECS Meeting - Denver, CO, United States
Duration: 2006 May 72006 May 12

Publication series

NameECS Transactions
Number10
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other209th ECS Meeting
CountryUnited States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • Engineering(all)

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    Kuroki, S. I., Fujii, S., Kotani, K., & Ito, T. (2007). Self-seeding crystallization of silicon thin films using continuous-wave laser. In Solid-State Joint Posters (General) (10 ed., pp. 71-75). (ECS Transactions; Vol. 2, No. 10). https://doi.org/10.1149/1.2408945