Low temperature crystallization of amorphous silicon thin films using continuous-wave laser was investigated. An overlapping of laser beam exposure enhanced the crystallization of a polycrystalline Si thin film, and the silicon crystal nucleus grew its size laterally. A laser beam spot had an elliptical shape for a gradual slope of temperature in a laser irradiated region, and was elongated to a scanning direction. The elongated laser spot with a gradual slope of temperature made a crystallization time longer. Consequently, a two dimensional lateral crystallization of (100) well-oriented Si thin films was achieved. Copyright The Electrochemical Society.