Self-sealing of nanoporous low dielectric constant patterns fabricated by nanoimprint lithography

A study was conducted to demonstrate the fabrication of self-sealing of nanoporous low dielectric constant patterns fabricated by nanoimprint lithography (NIL). The results of the study indicate that the imprint processes could have great potential for directly patterning and creating nanoporous low-k patterns required for semiconductor interconnect fabrication. Nanoporous low-k-patterns are created by directly patterning onto as-cast films of a poly(methyl-silsesquioxane) (PMSQ)-type spin-on organosilicate glass (SOG) material with added porogen. This direct patterning process appears to tailor the nanoporous structures inside the patterns to the positive way. Moderate reductions of the porogen-induced mesocale porosity are observed with a concomitant increase in the nanoscale intrinsic microporosity of the PMSQ-type material. The net effect is a decreased interconnectivity of the porous network, good for improving the barrier properties of the pattern.