Self-sealing of nanoporous low dielectric constant patterns fabricated by nanoimprint lithography

Hyun Wook Ro, Huagen Peng, Ken Ichi Niihara, Hae Jeong Lee, Eric K. Lin, Alamgir Karim, David W. Gidley, Hiroshi Jinnai, Do Y. Yoon, Christopher L. Soles

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

A study was conducted to demonstrate the fabrication of self-sealing of nanoporous low dielectric constant patterns fabricated by nanoimprint lithography (NIL). The results of the study indicate that the imprint processes could have great potential for directly patterning and creating nanoporous low-k patterns required for semiconductor interconnect fabrication. Nanoporous low-k-patterns are created by directly patterning onto as-cast films of a poly(methyl-silsesquioxane) (PMSQ)-type spin-on organosilicate glass (SOG) material with added porogen. This direct patterning process appears to tailor the nanoporous structures inside the patterns to the positive way. Moderate reductions of the porogen-induced mesocale porosity are observed with a concomitant increase in the nanoscale intrinsic microporosity of the PMSQ-type material. The net effect is a decreased interconnectivity of the porous network, good for improving the barrier properties of the pattern.

Original languageEnglish
Pages (from-to)1934-1939
Number of pages6
JournalAdvanced Materials
Volume20
Issue number10
DOIs
Publication statusPublished - 2008 May 19
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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