Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates

S. P. Guo; H. Ohno; A. Shen; F. Matsukura; Y. Ohno

doi:10.1016/S0169-4332(98)00157-3

Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates

S. P. Guo, H. Ohno, A. Shen, F. Matsukura, Y. Ohno

Research output: Contribution to journal › Conference article › peer-review

15 Citations (Scopus)

Abstract

We have grown (In,Mn)As quantum dots (QDs) on GaAs (100), (211)B and (311)B substrates. The observation of reflection high energy electron diffraction pattern and atomic force microscopy measurement confirmed the formation of the (In,Mn)As QDs. The structure grown on GaAs (100) showed a broad range of dot sizes with irregular shape. For the structure grown on GaAs (311)B, (In,Mn)As QDs with bimodal size distribution were observed. The (In,Mn)As QDs grown on GaAs (211)B showed improved size uniformity compared to those grown on GaAs (100) and (311)B. The effect of Mn as a surfactant on InAs nanostructures was also studied.

Original language	English
Pages (from-to)	797-802
Number of pages	6
Journal	Applied Surface Science
Volume	130-132
DOIs	https://doi.org/10.1016/S0169-4332(98)00157-3
Publication status	Published - 1998
Event	Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(98)00157-3

Cite this

@article{277f32e6c0424a10b3c6f221c77ab7c1,

title = "Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates",

abstract = "We have grown (In,Mn)As quantum dots (QDs) on GaAs (100), (211)B and (311)B substrates. The observation of reflection high energy electron diffraction pattern and atomic force microscopy measurement confirmed the formation of the (In,Mn)As QDs. The structure grown on GaAs (100) showed a broad range of dot sizes with irregular shape. For the structure grown on GaAs (311)B, (In,Mn)As QDs with bimodal size distribution were observed. The (In,Mn)As QDs grown on GaAs (211)B showed improved size uniformity compared to those grown on GaAs (100) and (311)B. The effect of Mn as a surfactant on InAs nanostructures was also studied.",

author = "Guo, {S. P.} and H. Ohno and A. Shen and F. Matsukura and Y. Ohno",

note = "Funding Information: Part of this work was supported by the `Research for the Future' Program from the Japan Society for the Promotion of Science (JSPS-RFTF97P00202) and by a Grant-in-Aid for Scientific Research on Priority Area (No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan.; Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 ; Conference date: 27-10-1997 Through 30-10-1997",

year = "1998",

doi = "10.1016/S0169-4332(98)00157-3",

language = "English",

volume = "130-132",

pages = "797--802",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates

AU - Guo, S. P.

AU - Ohno, H.

AU - Shen, A.

AU - Matsukura, F.

AU - Ohno, Y.

N1 - Funding Information: Part of this work was supported by the `Research for the Future' Program from the Japan Society for the Promotion of Science (JSPS-RFTF97P00202) and by a Grant-in-Aid for Scientific Research on Priority Area (No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan.

PY - 1998

Y1 - 1998

N2 - We have grown (In,Mn)As quantum dots (QDs) on GaAs (100), (211)B and (311)B substrates. The observation of reflection high energy electron diffraction pattern and atomic force microscopy measurement confirmed the formation of the (In,Mn)As QDs. The structure grown on GaAs (100) showed a broad range of dot sizes with irregular shape. For the structure grown on GaAs (311)B, (In,Mn)As QDs with bimodal size distribution were observed. The (In,Mn)As QDs grown on GaAs (211)B showed improved size uniformity compared to those grown on GaAs (100) and (311)B. The effect of Mn as a surfactant on InAs nanostructures was also studied.

AB - We have grown (In,Mn)As quantum dots (QDs) on GaAs (100), (211)B and (311)B substrates. The observation of reflection high energy electron diffraction pattern and atomic force microscopy measurement confirmed the formation of the (In,Mn)As QDs. The structure grown on GaAs (100) showed a broad range of dot sizes with irregular shape. For the structure grown on GaAs (311)B, (In,Mn)As QDs with bimodal size distribution were observed. The (In,Mn)As QDs grown on GaAs (211)B showed improved size uniformity compared to those grown on GaAs (100) and (311)B. The effect of Mn as a surfactant on InAs nanostructures was also studied.

UR - http://www.scopus.com/inward/record.url?scp=17544385969&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17544385969&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(98)00157-3

DO - 10.1016/S0169-4332(98)00157-3

M3 - Conference article

AN - SCOPUS:17544385969

SN - 0169-4332

VL - 130-132

SP - 797

EP - 802

JO - Applied Surface Science

JF - Applied Surface Science

T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4

Y2 - 27 October 1997 through 30 October 1997

ER -

Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this