Self-ordered Ge nanodot fabrication by reduced pressure chemical vapor deposition

Y. Yamamoto, Y. Itoh, P. Zaumseil, M. A. Schubert, G. Capellini, K. Washio, B. Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ge nanodot formation on Si surface and its three dimensional alignment is investigated using a reduced pressure chemical vapor deposition (RPCVD) system. By exposing GeH4 on Si (001) surface at 550C, a smooth wetting Ge layer is deposited for the first-0.9 nm, and then Ge nanodot formation occurs as Stranski-Krastanov growth mechanism. The Ge nanodots are randomly distributed with density of ~6xl010 cm'2. By postannealing at 600C, the Ge nanodots are coalesced. The size and density become-60 nm diameter 5 nm height and ̃1.5xl0 10 cm -2 respectively. By exposing GeH4 followed by postannealing at 600C on checkerboard mesa structured Si surface which is fabricated by embedded body-centered tetragonal (BCT) Sio.6Geo.4 nanodot, the Ge nanodot formation occurs at concave regions of the checkerboard mesa. By repeating Ge nanodot deposition and Si spacer deposition by two step epitaxy using SiRt at 600C and using SirfeCh at 700C, vertical alignment of the Ge nanodots is observed. The lateral periodicity of the Ge nanodots is the same as that of the BCT Sio.6Geo.4 nanodot template. The driving force of the self-ordered alignment is tensile strain of Si spacer surface above the Ge nanodots.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting
PublisherElectrochemical Society Inc.
Pages259-266
Number of pages8
Edition7
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2018 Jan 1
Event8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Publication series

NameECS Transactions
Number7
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • Engineering(all)

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