TY - GEN
T1 - Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy
AU - Takakuwa, Yuji
AU - Kawawa, T.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - The oxide growth kinetics at the initial stage of oxidation on the Si[001] surface was investigated by real-time Auger electron spectroscopy using a grazing-incident electron beam for RHEED observation to clarify the reaction mechanism of self-limiting oxidation observed for growth of oxides as thin as several Å at temperatures above 636°C.
AB - The oxide growth kinetics at the initial stage of oxidation on the Si[001] surface was investigated by real-time Auger electron spectroscopy using a grazing-incident electron beam for RHEED observation to clarify the reaction mechanism of self-limiting oxidation observed for growth of oxides as thin as several Å at temperatures above 636°C.
UR - http://www.scopus.com/inward/record.url?scp=84960337224&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84960337224&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2002.1178617
DO - 10.1109/IMNC.2002.1178617
M3 - Conference contribution
AN - SCOPUS:84960337224
T3 - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
SP - 208
EP - 209
BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Microprocesses and Nanotechnology Conference, MNC 2002
Y2 - 6 November 2002 through 8 November 2002
ER -