Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy

Yuji Takakuwa, T. Kawawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The oxide growth kinetics at the initial stage of oxidation on the Si[001] surface was investigated by real-time Auger electron spectroscopy using a grazing-incident electron beam for RHEED observation to clarify the reaction mechanism of self-limiting oxidation observed for growth of oxides as thin as several Å at temperatures above 636°C.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages208-209
Number of pages2
ISBN (Electronic)4891140313, 9784891140311
DOIs
Publication statusPublished - 2002 Jan 1
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: 2002 Nov 62002 Nov 8

Publication series

Name2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period02/11/602/11/8

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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