Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy

Yuji Takakuwa; T. Kawawa

doi:10.1109/IMNC.2002.1178617

Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy

Yuji Takakuwa, T. Kawawa

Division of Measurements

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The oxide growth kinetics at the initial stage of oxidation on the Si[001] surface was investigated by real-time Auger electron spectroscopy using a grazing-incident electron beam for RHEED observation to clarify the reaction mechanism of self-limiting oxidation observed for growth of oxides as thin as several Å at temperatures above 636°C.

Original language	English
Title of host publication	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	208-209
Number of pages	2
ISBN (Electronic)	4891140313, 9784891140311
DOIs	https://doi.org/10.1109/IMNC.2002.1178617
Publication status	Published - 2002 Jan 1
Event	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan Duration: 2002 Nov 6 → 2002 Nov 8

Publication series

Name	2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2002
Country/Territory	Japan
City	Tokyo
Period	02/11/6 → 02/11/8

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2002.1178617

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Takakuwa, Y., & Kawawa, T. (2002). Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 208-209). [1178617] (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178617

Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy. / Takakuwa, Yuji; Kawawa, T.

2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 208-209 1178617 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takakuwa, Y & Kawawa, T 2002, Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178617, 2002 International Microprocesses and Nanotechnology Conference, MNC 2002, Institute of Electrical and Electronics Engineers Inc., pp. 208-209, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 02/11/6. https://doi.org/10.1109/IMNC.2002.1178617

Takakuwa Y, Kawawa T. Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 208-209. 1178617. (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). doi: 10.1109/IMNC.2002.1178617

Takakuwa, Yuji ; Kawawa, T. / Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy. 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 208-209 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

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abstract = "The oxide growth kinetics at the initial stage of oxidation on the Si[001] surface was investigated by real-time Auger electron spectroscopy using a grazing-incident electron beam for RHEED observation to clarify the reaction mechanism of self-limiting oxidation observed for growth of oxides as thin as several {\AA} at temperatures above 636°C.",

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Self-limiting oxidation during growth of very thin oxides on Si[001] surface studied by real-time Auger electron spectroscopy

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