Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3

T. Kurabayashi; K. Kono; H. Kikuchi; J. Nishizawa; Masayoshi Esashi

doi:10.1016/S0022-0248(01)01111-3

Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH₃

T. Kurabayashi, K. Kono, H. Kikuchi, J. Nishizawa, Masayoshi Esashi

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

The surface reaction mechanism of GaAs MLE using a triethyl-gallium (TEG)-AsH₃ system was studied by varying the sequence of gas injection of TEG and AsH₃. The decomposition of TEG was found to be enhanced on the Ga-terminated (001)-oriented GaAs surface. The average lifetime of AsH_x (x = 0, 1, 2) formed by the AsH₃ supply was 8 s, and the lifetime of the ethyl group of the ethyl-gallium compound formed by the TEG supply was about 2 s. The gas supply sequence was chosen to be within the two lifetimes, and the self-limiting growth at the monolayer was achieved in the TEG pressure region of more than 5.3 × 10^-3 Pa at a temperature of 270°C.

Original language	English
Pages (from-to)	152-157
Number of pages	6
Journal	Journal of Crystal Growth
Volume	229
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(01)01111-3
Publication status	Published - 2001 Jul 2

Keywords

A1. Adsorption
A1. Atomic force microscopy
A1. Growth models
A1. Surface processes
A3. Atomic layer epitaxy
B2. Semiconducting gallium arsenide

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(01)01111-3

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Kurabayashi, T., Kono, K., Kikuchi, H., Nishizawa, J., & Esashi, M. (2001). Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH₃ Journal of Crystal Growth, 229(1), 152-157. https://doi.org/10.1016/S0022-0248(01)01111-3

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title = "Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3 ",

abstract = "The surface reaction mechanism of GaAs MLE using a triethyl-gallium (TEG)-AsH3 system was studied by varying the sequence of gas injection of TEG and AsH3. The decomposition of TEG was found to be enhanced on the Ga-terminated (001)-oriented GaAs surface. The average lifetime of AsHx (x = 0, 1, 2) formed by the AsH3 supply was 8 s, and the lifetime of the ethyl group of the ethyl-gallium compound formed by the TEG supply was about 2 s. The gas supply sequence was chosen to be within the two lifetimes, and the self-limiting growth at the monolayer was achieved in the TEG pressure region of more than 5.3 × 10-3 Pa at a temperature of 270°C.",

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T1 - Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3

AU - Kurabayashi, T.

AU - Kono, K.

AU - Kikuchi, H.

AU - Nishizawa, J.

AU - Esashi, Masayoshi

PY - 2001/7/2

Y1 - 2001/7/2

N2 - The surface reaction mechanism of GaAs MLE using a triethyl-gallium (TEG)-AsH3 system was studied by varying the sequence of gas injection of TEG and AsH3. The decomposition of TEG was found to be enhanced on the Ga-terminated (001)-oriented GaAs surface. The average lifetime of AsHx (x = 0, 1, 2) formed by the AsH3 supply was 8 s, and the lifetime of the ethyl group of the ethyl-gallium compound formed by the TEG supply was about 2 s. The gas supply sequence was chosen to be within the two lifetimes, and the self-limiting growth at the monolayer was achieved in the TEG pressure region of more than 5.3 × 10-3 Pa at a temperature of 270°C.

AB - The surface reaction mechanism of GaAs MLE using a triethyl-gallium (TEG)-AsH3 system was studied by varying the sequence of gas injection of TEG and AsH3. The decomposition of TEG was found to be enhanced on the Ga-terminated (001)-oriented GaAs surface. The average lifetime of AsHx (x = 0, 1, 2) formed by the AsH3 supply was 8 s, and the lifetime of the ethyl group of the ethyl-gallium compound formed by the TEG supply was about 2 s. The gas supply sequence was chosen to be within the two lifetimes, and the self-limiting growth at the monolayer was achieved in the TEG pressure region of more than 5.3 × 10-3 Pa at a temperature of 270°C.

KW - A1. Adsorption

KW - A1. Atomic force microscopy

KW - A1. Growth models

KW - A1. Surface processes

KW - A3. Atomic layer epitaxy

KW - B2. Semiconducting gallium arsenide

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