Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3

T. Kurabayashi, K. Kono, H. Kikuchi, J. Nishizawa, M. Esashi

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8 Citations (Scopus)


The surface reaction mechanism of GaAs MLE using a triethyl-gallium (TEG)-AsH3 system was studied by varying the sequence of gas injection of TEG and AsH3. The decomposition of TEG was found to be enhanced on the Ga-terminated (001)-oriented GaAs surface. The average lifetime of AsHx (x = 0, 1, 2) formed by the AsH3 supply was 8 s, and the lifetime of the ethyl group of the ethyl-gallium compound formed by the TEG supply was about 2 s. The gas supply sequence was chosen to be within the two lifetimes, and the self-limiting growth at the monolayer was achieved in the TEG pressure region of more than 5.3 × 10-3 Pa at a temperature of 270°C.

Original languageEnglish
Pages (from-to)152-157
Number of pages6
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2001 Jul 2


  • A1. Adsorption
  • A1. Atomic force microscopy
  • A1. Growth models
  • A1. Surface processes
  • A3. Atomic layer epitaxy
  • B2. Semiconducting gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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