Abstract
The surface reaction mechanism of GaAs MLE using a triethyl-gallium (TEG)-AsH3 system was studied by varying the sequence of gas injection of TEG and AsH3. The decomposition of TEG was found to be enhanced on the Ga-terminated (001)-oriented GaAs surface. The average lifetime of AsHx (x = 0, 1, 2) formed by the AsH3 supply was 8 s, and the lifetime of the ethyl group of the ethyl-gallium compound formed by the TEG supply was about 2 s. The gas supply sequence was chosen to be within the two lifetimes, and the self-limiting growth at the monolayer was achieved in the TEG pressure region of more than 5.3 × 10-3 Pa at a temperature of 270°C.
Original language | English |
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Pages (from-to) | 152-157 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 229 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 Jul 2 |
Keywords
- A1. Adsorption
- A1. Atomic force microscopy
- A1. Growth models
- A1. Surface processes
- A3. Atomic layer epitaxy
- B2. Semiconducting gallium arsenide
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry