Self-limiting deposition of Ga on a GaAs surface by thermal decomposition of diethylgalliumchloride observed by x-ray photoelectron spectroscopy

H. Ohno, H. Ishii, K. Matsuzaki, H. Hasegawa

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13 Citations (Scopus)

Abstract

Clean surfaces of molecular beam epitaxially grown GaAs were exposed to diethylgalliumchloride (DEGaCl) and the resultant change was observed by in situ x-ray photoelectron spectroscopy. At a substrate temperature of 300°C, a self-limiting reaction between DEGaCl and the surface resulted in one monolayer of Ga deposition which is believed to lead to atomic layer epitaxy of GaAs using DEGaCl. No appreciable increase of Cl or C was observed after exposure. Discussion on the mechanism of the self-limiting reaction is also presented.

Original languageEnglish
Pages (from-to)1124-1126
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number12
DOIs
Publication statusPublished - 1989 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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