Self-forming diffusion barrier layer in Cu-Mn alloy metallization

J. Koike, M. Wada

Research output: Contribution to journalArticle

241 Citations (Scopus)

Abstract

Advancement of semiconductor devices requires the realization of an ultrathin diffusion barrier layer between Cu interconnect and insulating layers. The present work investigated the possibility of the self-forming barrier layer in Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 °C for 30 min, a Mn containing amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. Residual Mn atoms were removed to form a surface oxide layer, leading to a drastic resistivity decrease of the film. No interdiffusion was detected between Cu and SiO2 within the detection limit of x-ray energy dispersive spectroscopy.

Original languageEnglish
Article number041911
JournalApplied Physics Letters
Volume87
Issue number4
DOIs
Publication statusPublished - 2005 Jul 25

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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