Self-formed barrier with Cu-Mn alloy metallization and its effects on reliability

J. Koike, M. Wada, T. Usui, H. Nasu, S. Takahashi, N. Shimizu, M. Yoshimaru, H. Shibata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Advancement of semiconductor devices requires the realization of an ultra-thin (less than 5 nm thick) diffusion barrier layer between Cu interconnect and insulating layers. Self-forming barrier layers have been considered as an alternative barrier structure to the conventional Ta/TaN barrier layers. The present work investigated the possibility of the self-forming barrier layer using Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 °C for 30 min, an amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. The oxide formation was accompanied by complete expulsion of Mn atoms from the Cu-Mn alloy, leading to a drastic decrease in resistivity of the film. No interdiffusion was observed between Cu and SiO2, indicating an excellent diffusion-barrier property of the interface oxide.

Original languageEnglish
Title of host publicationSTRESS-INDUCED PHENOMENA IN METALLIZATION
Subtitle of host publicationEighth International Workshop on Stress-Induced Phenomena in Metallization
Pages43-51
Number of pages9
DOIs
Publication statusPublished - 2006 Feb 7
Event8th International Workshop on Stress-Induced Phenomena in Metallization - Dresden, Germany
Duration: 2005 Sep 122005 Sep 14

Publication series

NameAIP Conference Proceedings
Volume817
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other8th International Workshop on Stress-Induced Phenomena in Metallization
CountryGermany
CityDresden
Period05/9/1205/9/14

Keywords

  • Alloy
  • Barrier
  • Copper
  • Interconnect

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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