Self-formation of Ti-rich layers at Cu(Ti)/low-k interfaces

Kazuyuki Kohama, Kazuhiro Ito, Susumu Tsukimoto, Kenichi Mori, Kazuyoshi Maekawa, Masanori Murakami

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    In our previous studies, thin Ti-rich diffusion barrier layers were found to be formed at the interface between Cu(Ti) films and SiC2/Si substrates after annealing at elevated temperatures. This technique was called "self-formation of the diffusion barrier," which is attractive for fabrication of ultra-large scale integrated (ULSI) interconnects. In the present study, we investigated the applicability of this technique to Cu(Ti) alloy films which were deposited on the four low dielectric constant (low-k) dielectric layers which are potential dielectric layers of future ULSI-Si devices. The microstructures were analyzed by transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), and correlated with the electrical properties of the Cu(Ti) films. It was concluded that the Ti-rich interface layers were formed in all the Cu(Ti)/dielectric-layer samples. The primary factor to control composition of the self-formed Ti-rich interface layers was the C concentration in the dielectric layers rather than the formation enthalpy of the Ti compounds (TiC and TiSi). Crystalline TiC was formed on the dielectric layers with a C concentration higher than 17 at.%.

    Original languageEnglish
    Title of host publicationMaterials and Processes for Advanced Interconnects for Microelectronics
    PublisherMaterials Research Society
    Pages41-46
    Number of pages6
    ISBN (Print)9781605608648
    DOIs
    Publication statusPublished - 2008
    Event2008 MRS Spring Meeting - San Francisco, CA, United States
    Duration: 2008 Mar 242008 Mar 28

    Publication series

    NameMaterials Research Society Symposium Proceedings
    Volume1079
    ISSN (Print)0272-9172

    Other

    Other2008 MRS Spring Meeting
    Country/TerritoryUnited States
    CitySan Francisco, CA
    Period08/3/2408/3/28

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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