Self-formation of Au microwires on Au-covered Si electrode surface by electrochemical etching in dilute hydrofluoric acid solution

Yasuo Kimura, Jun Nemoto, Atsushi Kusakabe, Yusuke Kondo, Michio Niwano

Research output: Contribution to journalConference article

Abstract

We have investigated the method of fabricating microstructures on a Si surface that is covered with a patterned gold (Au) mask, by electrochemical etching (anodization) in dilute hydrofluoric acid (HF) solution. We found that at electrode potentials below approximately 0.5 V, the Si surface is preferentially etched on the fringe of the Au mask, where a number of pores are formed. At higher electrode potentials, Au microwires with about 1 μm in width form along the fringe of the Au mask overlayer. We suggest that electromigration of Au towards the fringe of the Au mask induces self-assembling of Au atoms to form microwires. The observed self-formation of metal microwires would be beneficial to the fabrication of metal micro- or nano-structures on Si.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume638
Publication statusPublished - 2001 Dec 1
EventMicrocrystalline and Nanocrystalline Semiconductors 2000 - Boston, MA, United States
Duration: 2000 Nov 272000 Nov 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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