Self formation and photoluminescence of II-VI quantum wires on GaAs (110) surfaces

B. P. Zhang, W. X. Wang, G. Isoya, T. Yasuda, Y. Segawa, H. Yaguchi, K. Onabe, K. Edamatsu, T. Itoh

Research output: Contribution to journalConference articlepeer-review

Abstract

Extremely long ZnCdSe quantum wires (QWR's) are naturally formed on cleavage-induced GaAs (110) surfaces by depositing simply one ZnCdSe alloy layer. The wires are parallel to the [1̄10] direction and extend to millimeter order in length. Surface observations and optical studies demonstrate the formation of QWR's. Large piezo-electric field is observed in the QWR's. This work provides a novel approach to self organized QWR's.

Original languageEnglish
Pages (from-to)133-136
Number of pages4
JournalMolecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics
Volume18
Issue number2-4
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 International Symposium on Quantum Structures for Photonic Applications, QSPA'97 - Sendai, Jpn
Duration: 1997 Mar 61997 Mar 8

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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