Self-diffusion in intrinsic and extrinsic silicon using isotopically pure 30silicon/natural silicon heterostructures

Yukio Nakabayashi, Hirman I. Osman, Kazunari Toyonaga, Kaori Yokota, Satoru Matsumoto, Junichi Murota, Kazumi Wada, Takao Abe

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10 Citations (Scopus)


Silicon self-diffusion coefficients were measured in intrinsic and extrinsic silicon from 870 to 1070°C using isotopically pure 30Si/natural Si heterostructures. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si is obtained. Comparing it in heavily As- or B-doped Si, it is found that the fractional contribution of Si self-diffusion varies with diffusion temperatures and that different type of point defect (self-interstitial or vacancy) is supersaturated by the Fermi level effect in As- or B-doped silicon.

Original languageEnglish
Pages (from-to)3304-3310
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 A
Publication statusPublished - 2003 Jun
Externally publishedYes


  • Extrinsic diffusion
  • Fractional contriburion
  • Isotope heterostructure
  • Pure Si
  • Self-diffusion
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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