Self-diffusion in intrinsic and extrinsic silicon using isotopically pure 30silicon layer

Yukio Nakabayashi, Hirman I. Osman, Toru Segawa, Kazunari Toyonaga, Satoru Matsumoto, Junichi Murota, Kazumi Wada, Takao Abe

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Silicon self-diffusion coefficients were measured in intrinsic and extrinsic silicon from 870 to 1070°C using isotopically pure 30Si layer. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si is obtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.

Original languageEnglish
Pages (from-to)J331-J336
JournalMaterials Research Society Symposium - Proceedings
Volume669
Publication statusPublished - 2001 Dec 1
EventSi Front-end Processing - Physics and Technology of Dopant-Defect Interactions III - San Francisco, CA, United States
Duration: 2001 Apr 172001 Apr 19

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Nakabayashi, Y., Osman, H. I., Segawa, T., Toyonaga, K., Matsumoto, S., Murota, J., Wada, K., & Abe, T. (2001). Self-diffusion in intrinsic and extrinsic silicon using isotopically pure 30silicon layer. Materials Research Society Symposium - Proceedings, 669, J331-J336.