Self-consistent surface charges and electric field in p-i-n tunneling transit-time diodes based on single- and multiple-layer graphene structures

V. L. Semenenko, V. G. Leiman, A. V. Arsenin, V. Mitin, M. Ryzhii, T. Otsuji, V. Ryzhii

Research output: Contribution to journalConference article

Abstract

We develop a device model for p-i-n tunneling transit-time diodes based on graphene single- and multiple-layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for the features of the interband tunneling generation of electrons and holes and their ballistic transport in the device i-section, as well as the effect of the self-consistent electric field associated with the self-consistent charges of propagating electrons and holes. Using the developed model, we calculate the dc current-voltage characteristics and the ac frequency-dependent admittance as functions of the GTUNNETT structural parameters, in particular, the number of graphene layers.

Original languageEnglish
Article number012011
JournalJournal of Physics: Conference Series
Volume486
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies, RJUS TeraTech 2013 - Moscow, Russian Federation
Duration: 2013 Jun 32013 Jun 6

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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