Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFET's by electrochemical etching

Dong Xu; T. Enoki; Yotaro Umeda; Tetsuya Suemitsu; Yasuro Yamane; Yasunobu Ishii

doi:10.1109/55.735754

Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFET's by electrochemical etching

Dong Xu, T. Enoki, Yotaro Umeda, Tetsuya Suemitsu, Yasuro Yamane, Yasunobu Ishii

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We show that by making full use of the features of electrochemical etching in InAlAs/InGaAs heterostructures, deep gate grooves with small side etching can be fabricated. The most important advantage of this technology is that the vertical etching in the small gate openings will be remarkably enhanced by a self-organized process. Therefore the electrochemical etching provides a what we call "self-compensation" of the short channel effects. The effectiveness of this technology is evidenced by the excellent performance combined with the alleviation of the threshold-voltage shift and suppression of transconductance degradation in MODFET's with gate lengths below 0.1 μm.

Original language	English
Pages (from-to)	484-486
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	12
DOIs	https://doi.org/10.1109/55.735754
Publication status	Published - 1998 Dec 1
Externally published	Yes

Keywords

Electrochemical processes
Etching
MODFET's
Millimeter-wave FET's
Semiconductor device fabrication
Semiconductor heterojunction
Submillimeter-wave FET's

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{6439281945c54eb9bf5e2afd2cf12efc,

title = "Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFET's by electrochemical etching",

abstract = "We show that by making full use of the features of electrochemical etching in InAlAs/InGaAs heterostructures, deep gate grooves with small side etching can be fabricated. The most important advantage of this technology is that the vertical etching in the small gate openings will be remarkably enhanced by a self-organized process. Therefore the electrochemical etching provides a what we call {"}self-compensation{"} of the short channel effects. The effectiveness of this technology is evidenced by the excellent performance combined with the alleviation of the threshold-voltage shift and suppression of transconductance degradation in MODFET's with gate lengths below 0.1 μm.",

keywords = "Electrochemical processes, Etching, MODFET's, Millimeter-wave FET's, Semiconductor device fabrication, Semiconductor heterojunction, Submillimeter-wave FET's",

author = "Dong Xu and T. Enoki and Yotaro Umeda and Tetsuya Suemitsu and Yasuro Yamane and Yasunobu Ishii",

year = "1998",

month = dec,

day = "1",

doi = "10.1109/55.735754",

language = "English",

volume = "19",

pages = "484--486",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFET's by electrochemical etching

AU - Xu, Dong

AU - Enoki, T.

AU - Umeda, Yotaro

AU - Suemitsu, Tetsuya

AU - Yamane, Yasuro

AU - Ishii, Yasunobu

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We show that by making full use of the features of electrochemical etching in InAlAs/InGaAs heterostructures, deep gate grooves with small side etching can be fabricated. The most important advantage of this technology is that the vertical etching in the small gate openings will be remarkably enhanced by a self-organized process. Therefore the electrochemical etching provides a what we call "self-compensation" of the short channel effects. The effectiveness of this technology is evidenced by the excellent performance combined with the alleviation of the threshold-voltage shift and suppression of transconductance degradation in MODFET's with gate lengths below 0.1 μm.

AB - We show that by making full use of the features of electrochemical etching in InAlAs/InGaAs heterostructures, deep gate grooves with small side etching can be fabricated. The most important advantage of this technology is that the vertical etching in the small gate openings will be remarkably enhanced by a self-organized process. Therefore the electrochemical etching provides a what we call "self-compensation" of the short channel effects. The effectiveness of this technology is evidenced by the excellent performance combined with the alleviation of the threshold-voltage shift and suppression of transconductance degradation in MODFET's with gate lengths below 0.1 μm.

KW - Electrochemical processes

KW - Etching

KW - MODFET's

KW - Millimeter-wave FET's

KW - Semiconductor device fabrication

KW - Semiconductor heterojunction

KW - Submillimeter-wave FET's

UR - http://www.scopus.com/inward/record.url?scp=0032293312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032293312&partnerID=8YFLogxK

U2 - 10.1109/55.735754

DO - 10.1109/55.735754

M3 - Article

AN - SCOPUS:0032293312

VL - 19

SP - 484

EP - 486

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

ER -