Self-assembled, very long II-VI semiconductor quantum wires

B. P. Zhang; W. X. Wang; T. Yasuda; Y. Segawa; H. Yaguchi; K. Onabe; K. Edamatsu; T. Itoh

doi:10.1016/S0921-5107(97)00265-1

Self-assembled, very long II-VI semiconductor quantum wires

B. P. Zhang, W. X. Wang, T. Yasuda, Y. Segawa, H. Yaguchi, K. Onabe, K. Edamatsu, T. Itoh

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Self-organized ZnCdSe quantum wires (QWRs) are realized on cleavage-induced GaAs (110) surfaces based on simultaneous selective growth and composition modulation. Formed on step tops, the QWRs are parallel to the [1̄10] direction and extend to millimeter order in length. Surface observations and optical studies demonstrate the formation of QWRs. A large piezo-electric field is observed in the QWRs, implying potential applications in nonlinear optoelectronic devices.

Original language	English
Pages (from-to)	224-228
Number of pages	5
Journal	Materials Science and Engineering B
Volume	51
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(97)00265-1
Publication status	Published - 1998 Feb 27

Keywords

Piezo-electric field
Quantum wires
Self-organized

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(97)00265-1

Cite this

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title = "Self-assembled, very long II-VI semiconductor quantum wires",

abstract = "Self-organized ZnCdSe quantum wires (QWRs) are realized on cleavage-induced GaAs (110) surfaces based on simultaneous selective growth and composition modulation. Formed on step tops, the QWRs are parallel to the [{\=1}10] direction and extend to millimeter order in length. Surface observations and optical studies demonstrate the formation of QWRs. A large piezo-electric field is observed in the QWRs, implying potential applications in nonlinear optoelectronic devices.",

keywords = "Piezo-electric field, Quantum wires, Self-organized",

author = "Zhang, {B. P.} and Wang, {W. X.} and T. Yasuda and Y. Segawa and H. Yaguchi and K. Onabe and K. Edamatsu and T. Itoh",

note = "Funding Information: Zhang wishes to express his gratitude to the Special Postdoctoral Research Program of RIKEN, and to The Ministry of Education, Science, Sports and Culture of Japan due to a Grant-in-Aid for Encouragement of Young Scientists (No. 08750028).",

year = "1998",

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doi = "10.1016/S0921-5107(97)00265-1",

language = "English",

volume = "51",

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T1 - Self-assembled, very long II-VI semiconductor quantum wires

AU - Zhang, B. P.

AU - Wang, W. X.

AU - Yasuda, T.

AU - Segawa, Y.

AU - Yaguchi, H.

AU - Onabe, K.

AU - Edamatsu, K.

AU - Itoh, T.

N1 - Funding Information: Zhang wishes to express his gratitude to the Special Postdoctoral Research Program of RIKEN, and to The Ministry of Education, Science, Sports and Culture of Japan due to a Grant-in-Aid for Encouragement of Young Scientists (No. 08750028).

PY - 1998/2/27

Y1 - 1998/2/27

N2 - Self-organized ZnCdSe quantum wires (QWRs) are realized on cleavage-induced GaAs (110) surfaces based on simultaneous selective growth and composition modulation. Formed on step tops, the QWRs are parallel to the [1̄10] direction and extend to millimeter order in length. Surface observations and optical studies demonstrate the formation of QWRs. A large piezo-electric field is observed in the QWRs, implying potential applications in nonlinear optoelectronic devices.

AB - Self-organized ZnCdSe quantum wires (QWRs) are realized on cleavage-induced GaAs (110) surfaces based on simultaneous selective growth and composition modulation. Formed on step tops, the QWRs are parallel to the [1̄10] direction and extend to millimeter order in length. Surface observations and optical studies demonstrate the formation of QWRs. A large piezo-electric field is observed in the QWRs, implying potential applications in nonlinear optoelectronic devices.

KW - Piezo-electric field

KW - Quantum wires

KW - Self-organized

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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ER -

Self-assembled, very long II-VI semiconductor quantum wires

Abstract

Keywords

ASJC Scopus subject areas

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