Abstract
A composite structure of Si and Au was formed by a self-assembly process on a nanometer scale. Au fine particles generated by a gas-phase condensation method were deposited on a single-crystalline Si(1 1 1) substrate. Through a heat treatment and a cooling process, a nanocomposite structure of Si-Au was formed on the surface of the Si substrate. This structure was produced by three steps as follows. First, a Si-Au droplet was formed on the Si surface at an elevated temperature. Second, the Si atoms were precipitated from the Si-Au droplet during the cooling process. Finally, Si and Au completely separated, forming a nanocomposite structure of Si-Au below the eutectic temperature. As a result, Si/metal heterointerface could be fabricated on a nanometer scale. Additionally, observation of a high-resolution transmission electron microscopy (HRTEM) revealed that precipitated Si dots had an epitaxial relation with the Si substrate. Namely, the Au fine particles played the role of a transport medium in the process of liquid phase epitaxy (LPE).
Original language | English |
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Pages (from-to) | 304-307 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 181 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1997 Nov |
Externally published | Yes |
Keywords
- Au fine-particles
- EDX
- Eutectic system
- LPE
- Si
- TEM
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry