Self-assembled-monolayer film islands as a self-patterned-mask for SiO2 thickness measurement with atomic force microscopy

Tadahiro Komeda, K. Namba, Y. Nishioka

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18 Citations (Scopus)


A novel method for measuring ultrathin (2-12 nm) SiO2 film thickness is discussed. The process consists of: (1) formation of octadecyltrichlorosilane (OTS) self-assembled-monolayer (SAM) islands on SiO2 of which thickness to be measured, (2) removal of the SiO2 layers not covered by the OTS-SAM islands, and (3) measurement of the height difference between the etched and nonetched areas by atomic-force-microscopy. The OTS film is good resist against HF and its islands can be regarded as self-patterned-mask. Practical usefulness is demonstrated not only by the compatibility of the measured values but also by the short measurement period resulting from the -~-directness of the method.

Original languageEnglish
Pages (from-to)3398-3400
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 1997 Jun 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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