TY - JOUR
T1 - Self-assembled formation of ZnCdSe quantum dots on atomically smooth ZnSe surfaces on GaAs(001) by molecular beam epitaxy
AU - Arai, Kenta
AU - Ohtake, Akihiro
AU - Hanada, Takashi
AU - Miwa, Shiro
AU - Yasuda, Tetsuji
AU - Yao, Takafumi
N1 - Funding Information:
This work is partially supported by Grant-in-Aid from the Ministry of Science, Culture, Sports, and Education. This work, partly supported by New Energy and Industrial Technology Development Organization (NEDO), was performed at JRCAT under a research agreement between NAIR and ATP.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - We investigate growth conditions to obtain atomically flat ZnSe film surfaces on GaAs(001) without forming ZnSe-related dot structures. It is found that high temperature growth is favorable for the growth of ZnSe with a smooth surface. In order to prevent degradation of interface properties at high substrate temperature, two-step growth of ZnSe layers is employed, where a low-temperature growth step is followed by high temperature growth. The two-step process enables one to grow ZnSe with atomically flat surface without ZnSe-related dots structures. The formation of self-assembled ZnCdSe quantum dots (QDs) is achieved on such atomically surfaces. Typical QD size is: base diameter of 21±3 nm and height of 8±2 nm. Even at a total deposition of ZnCdSe of 3.5 monolayer (ML), the QD density is as low as approximately 2.4 μm-2. It is found that these QDs are formed on a ZnCdSe wetting layer whose thickness is at least 3 ML.
AB - We investigate growth conditions to obtain atomically flat ZnSe film surfaces on GaAs(001) without forming ZnSe-related dot structures. It is found that high temperature growth is favorable for the growth of ZnSe with a smooth surface. In order to prevent degradation of interface properties at high substrate temperature, two-step growth of ZnSe layers is employed, where a low-temperature growth step is followed by high temperature growth. The two-step process enables one to grow ZnSe with atomically flat surface without ZnSe-related dots structures. The formation of self-assembled ZnCdSe quantum dots (QDs) is achieved on such atomically surfaces. Typical QD size is: base diameter of 21±3 nm and height of 8±2 nm. Even at a total deposition of ZnCdSe of 3.5 monolayer (ML), the QD density is as low as approximately 2.4 μm-2. It is found that these QDs are formed on a ZnCdSe wetting layer whose thickness is at least 3 ML.
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U2 - 10.1016/S0040-6090(99)00464-2
DO - 10.1016/S0040-6090(99)00464-2
M3 - Conference article
AN - SCOPUS:0033313783
VL - 357
SP - 1
EP - 7
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -