TY - GEN
T1 - Self-assemble formation of Ge dots on Si(100) via C/Ge/C/Si structure
AU - Itoh, Y.
AU - Kawashima, T.
AU - Washio, K.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - Formation of Ge dots via a C2/Ge/C1/Si structure through solidphase epitaxy by subsequent annealing at 650°C in a molecular beam epitaxy chamber was investigated. The dot density increased with C1 coverage similar to the case of a Ge/C1/Si structure. This suggests that Si-C bonds at a Ge/Si interface are effective to form small and dense Ge dots. The smallest and densest dots were formed for C1 = 0.5 ML and C2 = 0.1 ML with mean diameter and dot density of 28.3 nm and 9.6 × 1010 cm-2, respectively. However, the dot size and density of the C2/Ge/C1/Si structure was 1.3 times larger and 0.6 times lower than those of the Ge/C1/Si structure in the case of C1 = 0.5 ML, respectively. As a result, it was found that C2 atoms on Ge interfere with the effect of reducing dot size in the Ge/C1/Si structures and therefore Ge dots became large.
AB - Formation of Ge dots via a C2/Ge/C1/Si structure through solidphase epitaxy by subsequent annealing at 650°C in a molecular beam epitaxy chamber was investigated. The dot density increased with C1 coverage similar to the case of a Ge/C1/Si structure. This suggests that Si-C bonds at a Ge/Si interface are effective to form small and dense Ge dots. The smallest and densest dots were formed for C1 = 0.5 ML and C2 = 0.1 ML with mean diameter and dot density of 28.3 nm and 9.6 × 1010 cm-2, respectively. However, the dot size and density of the C2/Ge/C1/Si structure was 1.3 times larger and 0.6 times lower than those of the Ge/C1/Si structure in the case of C1 = 0.5 ML, respectively. As a result, it was found that C2 atoms on Ge interfere with the effect of reducing dot size in the Ge/C1/Si structures and therefore Ge dots became large.
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U2 - 10.1149/06910.0069ecst
DO - 10.1149/06910.0069ecst
M3 - Conference contribution
AN - SCOPUS:84946018890
T3 - ECS Transactions
SP - 69
EP - 73
BT - ULSI Process Integration 9
A2 - Claeys, C.
A2 - Murota, J.
A2 - Tao, M.
A2 - Iwai, H.
A2 - Deleonibus, S.
PB - Electrochemical Society Inc.
T2 - Symposium on ULSI Process Integration 9 - 228th ECS Meeting
Y2 - 11 October 2015 through 15 October 2015
ER -