Self-assemble formation of Ge dots on Si(100) via C/Ge/C/Si structure

Y. Itoh, T. Kawashima, K. Washio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Formation of Ge dots via a C2/Ge/C1/Si structure through solidphase epitaxy by subsequent annealing at 650°C in a molecular beam epitaxy chamber was investigated. The dot density increased with C1 coverage similar to the case of a Ge/C1/Si structure. This suggests that Si-C bonds at a Ge/Si interface are effective to form small and dense Ge dots. The smallest and densest dots were formed for C1 = 0.5 ML and C2 = 0.1 ML with mean diameter and dot density of 28.3 nm and 9.6 × 1010 cm-2, respectively. However, the dot size and density of the C2/Ge/C1/Si structure was 1.3 times larger and 0.6 times lower than those of the Ge/C1/Si structure in the case of C1 = 0.5 ML, respectively. As a result, it was found that C2 atoms on Ge interfere with the effect of reducing dot size in the Ge/C1/Si structures and therefore Ge dots became large.

Original languageEnglish
Title of host publicationULSI Process Integration 9
EditorsJ. Murota, C. Claeys, S. Deleonibus, M. Tao, H. Iwai
PublisherElectrochemical Society Inc.
Pages69-73
Number of pages5
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States
Duration: 2015 Oct 112015 Oct 15

Publication series

NameECS Transactions
Number10
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on ULSI Process Integration 9 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period15/10/1115/10/15

ASJC Scopus subject areas

  • Engineering(all)

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