Self-assemble formation of Ge dots on Si(100) via C/Ge/C/Si structure

Y. Itoh; T. Kawashima; K. Washio

doi:10.1149/06910.0069ecst

Self-assemble formation of Ge dots on Si(100) via C/Ge/C/Si structure

Y. Itoh, T. Kawashima, K. Washio

ENG - Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Formation of Ge dots via a C₂/Ge/C₁/Si structure through solidphase epitaxy by subsequent annealing at 650°C in a molecular beam epitaxy chamber was investigated. The dot density increased with C₁ coverage similar to the case of a Ge/C₁/Si structure. This suggests that Si-C bonds at a Ge/Si interface are effective to form small and dense Ge dots. The smallest and densest dots were formed for C₁ = 0.5 ML and C₂ = 0.1 ML with mean diameter and dot density of 28.3 nm and 9.6 × 10¹⁰ cm^-2, respectively. However, the dot size and density of the C₂/Ge/C₁/Si structure was 1.3 times larger and 0.6 times lower than those of the Ge/C₁/Si structure in the case of C₁ = 0.5 ML, respectively. As a result, it was found that C₂ atoms on Ge interfere with the effect of reducing dot size in the Ge/C₁/Si structures and therefore Ge dots became large.

Original language	English
Title of host publication	ULSI Process Integration 9
Editors	J. Murota, C. Claeys, S. Deleonibus, M. Tao, H. Iwai
Publisher	Electrochemical Society Inc.
Pages	69-73
Number of pages	5
Edition	10
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06910.0069ecst
Publication status	Published - 2015
Event	Symposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States Duration: 2015 Oct 11 → 2015 Oct 15

Publication series

Name	ECS Transactions
Number	10
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on ULSI Process Integration 9 - 228th ECS Meeting
Country	United States
City	Phoenix
Period	15/10/11 → 15/10/15

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/06910.0069ecst

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Self-assemble formation of Ge dots on Si(100) via C/Ge/C/Si structure. / Itoh, Y.; Kawashima, T.; Washio, K.

ULSI Process Integration 9. ed. / J. Murota; C. Claeys; S. Deleonibus; M. Tao; H. Iwai. 10. ed. Electrochemical Society Inc., 2015. p. 69-73 (ECS Transactions; Vol. 69, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Itoh, Y, Kawashima, T & Washio, K 2015, Self-assemble formation of Ge dots on Si(100) via C/Ge/C/Si structure. in J Murota, C Claeys, S Deleonibus, M Tao & H Iwai (eds), ULSI Process Integration 9. 10 edn, ECS Transactions, no. 10, vol. 69, Electrochemical Society Inc., pp. 69-73, Symposium on ULSI Process Integration 9 - 228th ECS Meeting, Phoenix, United States, 15/10/11. https://doi.org/10.1149/06910.0069ecst

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title = "Self-assemble formation of Ge dots on Si(100) via C/Ge/C/Si structure",

abstract = "Formation of Ge dots via a C2/Ge/C1/Si structure through solidphase epitaxy by subsequent annealing at 650°C in a molecular beam epitaxy chamber was investigated. The dot density increased with C1 coverage similar to the case of a Ge/C1/Si structure. This suggests that Si-C bonds at a Ge/Si interface are effective to form small and dense Ge dots. The smallest and densest dots were formed for C1 = 0.5 ML and C2 = 0.1 ML with mean diameter and dot density of 28.3 nm and 9.6 × 1010 cm-2, respectively. However, the dot size and density of the C2/Ge/C1/Si structure was 1.3 times larger and 0.6 times lower than those of the Ge/C1/Si structure in the case of C1 = 0.5 ML, respectively. As a result, it was found that C2 atoms on Ge interfere with the effect of reducing dot size in the Ge/C1/Si structures and therefore Ge dots became large.",

author = "Y. Itoh and T. Kawashima and K. Washio",

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N2 - Formation of Ge dots via a C2/Ge/C1/Si structure through solidphase epitaxy by subsequent annealing at 650°C in a molecular beam epitaxy chamber was investigated. The dot density increased with C1 coverage similar to the case of a Ge/C1/Si structure. This suggests that Si-C bonds at a Ge/Si interface are effective to form small and dense Ge dots. The smallest and densest dots were formed for C1 = 0.5 ML and C2 = 0.1 ML with mean diameter and dot density of 28.3 nm and 9.6 × 1010 cm-2, respectively. However, the dot size and density of the C2/Ge/C1/Si structure was 1.3 times larger and 0.6 times lower than those of the Ge/C1/Si structure in the case of C1 = 0.5 ML, respectively. As a result, it was found that C2 atoms on Ge interfere with the effect of reducing dot size in the Ge/C1/Si structures and therefore Ge dots became large.

AB - Formation of Ge dots via a C2/Ge/C1/Si structure through solidphase epitaxy by subsequent annealing at 650°C in a molecular beam epitaxy chamber was investigated. The dot density increased with C1 coverage similar to the case of a Ge/C1/Si structure. This suggests that Si-C bonds at a Ge/Si interface are effective to form small and dense Ge dots. The smallest and densest dots were formed for C1 = 0.5 ML and C2 = 0.1 ML with mean diameter and dot density of 28.3 nm and 9.6 × 1010 cm-2, respectively. However, the dot size and density of the C2/Ge/C1/Si structure was 1.3 times larger and 0.6 times lower than those of the Ge/C1/Si structure in the case of C1 = 0.5 ML, respectively. As a result, it was found that C2 atoms on Ge interfere with the effect of reducing dot size in the Ge/C1/Si structures and therefore Ge dots became large.

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