Self-aligned selective-epitaxial-growth SiGe HBTs: Process, device, and ICs

Katsuyoshi Washio, Eiji Ohue, Katsuya Oda, Reiko Hayami, Masamichi Tanabe, Hiromi Shimamoto, Toru Masuda, Ken'ichi Ohhata, Masao Kondo

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)


We review the fabrication and device technologies of a high-speed self-aligned selective-epitaxial-growth (SEG) SiGe-base heterojunction bipolar transistor (HBT), and its potential application in ICs for optical-fiber-link systems. A 0.54-μm-wide SiGe base, self-aligned to the 0.14-μm-wide emitter to reduce collector capacitance, was selectively grown by using a UHV/CVD system. A self-aligned stacked metal/in situ doped poly-Si electrode technology enables low parasitic resistance, and allows the intrinsic base profile to be kept shallow, so it is well-suited to a SiGe-base HBT. A 2-μm-wide insulator refilled trench was introduced to reduce substrate capacitance. This SiGe HBT makes it possible to obtain 95-GHz cutoff frequencies and 97-GHz maximum oscillation frequencies, and ultra-high-speed emitter-coupled-logic (ECL) circuits with an 8-ps gate delay. The technology was applied in ICs required for optical-fiber-link systems, including a 1/8 static frequency divider with a maximum operating frequency of up to 50 GHz, a time-division multiplexer and a demultiplexer operating at 40 Gb/s, a preamplifier with a bandwidth of 35 GHz, an AGC amplifier core with a bandwidth of 32 GHz, and a decision circuit operating at 40 Gb/s.

Original languageEnglish
Pages (from-to)352-357
Number of pages6
JournalThin Solid Films
Issue number1
Publication statusPublished - 2000 Jul 3
Externally publishedYes
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sep 121999 Sep 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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