Self-aligned metal/IDP Si bipolar technology with 12-ps ECL and 45-GHz dynamic frequency divider

Katsuyoshi Washio, Eiji Ohue, Masamichi Tanabe, Takahiro Onai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A self-aligned stacked metal/IDP (SMI) Si bipolar transistor technology that offers low base resistance with shallow impurity profiles is described. This technology makes it possible to obtain ultra-high-speed operation with a 12-ps gate-delay ECL and a 45-GHz dynamic frequency divider. These measured data are the best yet reported for Si technology.

Original languageEnglish
Title of host publicationESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
EditorsMassimo Rudan, Giorgio Baccarani
PublisherIEEE Computer Society
Pages807-810
Number of pages4
ISBN (Electronic)286332196X
ISBN (Print)9782863321966
Publication statusPublished - 1996 Jan 1
Externally publishedYes
Event26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
Duration: 1996 Sep 91996 Sep 11

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other26th European Solid State Device Research Conference, ESSDERC 1996
CountryItaly
CityBologna
Period96/9/996/9/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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