Self-aligned metal/IDP (SMI) technology is proposed to achieve high-speed bipolar transistors. SMI technology produces stacked metal/in-situ doped poly-Si (IDP) base electrodes that have a small thermal budget to obtain low base resistance and a shallow link base for small-collector capacitance and high-cutoff frequency. A 16.2-ps delay time in an ECL ring oscillator, and a delay time of 14.3 ps in a differential ECL ring oscillator were achieved by using SMI technology with an ion-implanted base.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|Publication status||Published - 1995 Dec 1|
|Event||Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA|
Duration: 1995 Dec 10 → 1995 Dec 13
ASJC Scopus subject areas
- Electrical and Electronic Engineering