Self-aligned metal/IDP si bipolar technology featuring 14 ps/70 GHz

Takahiro Onai, Eiji Ohue, Masamichi Tanabe, Katsuyoshi Washio

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

Self-aligned metal/IDP (SMI) technology is proposed to achieve high-speed bipolar transistors. SMI technology produces stacked metal/in-situ doped poly-Si (IDP) base electrodes that have a small thermal budget to obtain low base resistance and a shallow link base for small-collector capacitance and high-cutoff frequency. A 16.2-ps delay time in an ECL ring oscillator, and a delay time of 14.3 ps in a differential ECL ring oscillator were achieved by using SMI technology with an ion-implanted base.

Original languageEnglish
Pages (from-to)699-702
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1995 Dec 1
Externally publishedYes
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 1995 Dec 101995 Dec 13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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