Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450 °C. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.
|Number of pages||7|
|Journal||IEICE Transactions on Electronics|
|Publication status||Published - 1993 Apr 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering