Self-aligned aluminum-gate MOSFET's having ultra-shallow junctions formed by 450 °C furnace annealing

Koji Kotani; Tadahiro Ohmi; Satoshi Shimonishi; Tomohiro Migita; Hideki Komori; Tadashi Shibata

Self-aligned aluminum-gate MOSFET's having ultra-shallow junctions formed by 450 °C furnace annealing

Koji Kotani, Tadahiro Ohmi, Satoshi Shimonishi, Tomohiro Migita, Hideki Komori, Tadashi Shibata

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450 °C. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.

Original language	English
Pages (from-to)	541-547
Number of pages	7
Journal	IEICE Transactions on Electronics
Volume	E76-C
Issue number	4
Publication status	Published - 1993 Apr 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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abstract = "Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450 °C. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.",

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AU - Kotani, Koji

AU - Ohmi, Tadahiro

AU - Shimonishi, Satoshi

AU - Migita, Tomohiro

AU - Komori, Hideki

AU - Shibata, Tadashi

PY - 1993/4/1

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N2 - Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450 °C. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.

AB - Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450 °C. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.

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JF - IEICE Transactions on Electronics

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ER -

Self-aligned aluminum-gate MOSFET's having ultra-shallow junctions formed by 450 °C furnace annealing

Abstract

ASJC Scopus subject areas

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