Self-Accelerating oxidation on Si(111)7 × 7 surfaces studied by real-Time photoelectron spectroscopy

Jiayi Tang; Kiwamu Nishimoto; Shuichi Ogawa; Yoshigoe Akitaka; Shinnji Ishidzuka; Daiki Watanabe; Yuden Teraoka; Yuji Takakuwa

doi:10.1002/sia.5615

Self-Accelerating oxidation on Si(111)7 × 7 surfaces studied by real-Time photoelectron spectroscopy

Jiayi Tang, Kiwamu Nishimoto, Shuichi Ogawa, Yoshigoe Akitaka, Shinnji Ishidzuka, Daiki Watanabe, Yuden Teraoka, Yuji Takakuwa

Division of Measurements

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 °C has been investigated by real-Time X-ray photoelectron spectroscopy. Self-Accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 °C. During self-Acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Si_ß, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self-Accelerating interface oxidation model of Si(111)7 × 7 surfaces that includes the point defect (emitted Si atoms + vacancies) generation is proposed.

Original language	English
Pages (from-to)	1147-1150
Number of pages	4
Journal	Surface and Interface Analysis
Volume	46
Issue number	12-13
DOIs	https://doi.org/10.1002/sia.5615
Publication status	Published - 2014 Dec 1

Keywords

Interface oxidation
Interface strain
Real-Time photoelectron spectroscopy
Si(111)7 × 7

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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Self-Accelerating oxidation on Si(111)7 × 7 surfaces studied by real-Time photoelectron spectroscopy. / Tang, Jiayi; Nishimoto, Kiwamu; Ogawa, Shuichi; Akitaka, Yoshigoe; Ishidzuka, Shinnji; Watanabe, Daiki; Teraoka, Yuden; Takakuwa, Yuji.

In: Surface and Interface Analysis, Vol. 46, No. 12-13, 01.12.2014, p. 1147-1150.

Research output: Contribution to journal › Article › peer-review

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title = "Self-Accelerating oxidation on Si(111)7 × 7 surfaces studied by real-Time photoelectron spectroscopy",

abstract = "Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 °C has been investigated by real-Time X-ray photoelectron spectroscopy. Self-Accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 °C. During self-Acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Si{\ss}, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self-Accelerating interface oxidation model of Si(111)7 × 7 surfaces that includes the point defect (emitted Si atoms + vacancies) generation is proposed.",

keywords = "Interface oxidation, Interface strain, Real-Time photoelectron spectroscopy, Si(111)7 × 7",

author = "Jiayi Tang and Kiwamu Nishimoto and Shuichi Ogawa and Yoshigoe Akitaka and Shinnji Ishidzuka and Daiki Watanabe and Yuden Teraoka and Yuji Takakuwa",

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T1 - Self-Accelerating oxidation on Si(111)7 × 7 surfaces studied by real-Time photoelectron spectroscopy

AU - Tang, Jiayi

AU - Nishimoto, Kiwamu

AU - Ogawa, Shuichi

AU - Akitaka, Yoshigoe

AU - Ishidzuka, Shinnji

AU - Watanabe, Daiki

AU - Teraoka, Yuden

AU - Takakuwa, Yuji

PY - 2014/12/1

Y1 - 2014/12/1

N2 - Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 °C has been investigated by real-Time X-ray photoelectron spectroscopy. Self-Accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 °C. During self-Acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Siß, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self-Accelerating interface oxidation model of Si(111)7 × 7 surfaces that includes the point defect (emitted Si atoms + vacancies) generation is proposed.

AB - Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 °C has been investigated by real-Time X-ray photoelectron spectroscopy. Self-Accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 °C. During self-Acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Siß, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self-Accelerating interface oxidation model of Si(111)7 × 7 surfaces that includes the point defect (emitted Si atoms + vacancies) generation is proposed.

KW - Interface oxidation

KW - Interface strain

KW - Real-Time photoelectron spectroscopy

KW - Si(111)7 × 7

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JF - Surface and Interface Analysis

SN - 0142-2421

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Self-Accelerating oxidation on Si(111)7 × 7 surfaces studied by real-Time photoelectron spectroscopy

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Keywords

ASJC Scopus subject areas

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