Abstract
Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 °C has been investigated by real-Time X-ray photoelectron spectroscopy. Self-Accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 °C. During self-Acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Siß, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self-Accelerating interface oxidation model of Si(111)7 × 7 surfaces that includes the point defect (emitted Si atoms + vacancies) generation is proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 1147-1150 |
| Number of pages | 4 |
| Journal | Surface and Interface Analysis |
| Volume | 46 |
| Issue number | 12-13 |
| DOIs | |
| Publication status | Published - 2014 Dec 1 |
Keywords
- Interface oxidation
- Interface strain
- Real-Time photoelectron spectroscopy
- Si(111)7 × 7
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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Cite this
Tang, J., Nishimoto, K., Ogawa, S., Akitaka, Y., Ishidzuka, S., Watanabe, D., Teraoka, Y., & Takakuwa, Y. (2014). Self-Accelerating oxidation on Si(111)7 × 7 surfaces studied by real-Time photoelectron spectroscopy. Surface and Interface Analysis, 46(12-13), 1147-1150. https://doi.org/10.1002/sia.5615