Abstract
Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 °C has been investigated by real-Time X-ray photoelectron spectroscopy. Self-Accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 °C. During self-Acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Siß, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self-Accelerating interface oxidation model of Si(111)7 × 7 surfaces that includes the point defect (emitted Si atoms + vacancies) generation is proposed.
Original language | English |
---|---|
Pages (from-to) | 1147-1150 |
Number of pages | 4 |
Journal | Surface and Interface Analysis |
Volume | 46 |
Issue number | 12-13 |
DOIs | |
Publication status | Published - 2014 Dec 1 |
Keywords
- Interface oxidation
- Interface strain
- Real-Time photoelectron spectroscopy
- Si(111)7 × 7
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry