Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy

Hidemi Shigekawa; Haruhiro Oigawa; Koji Miyake; Yoshiaki Aiso; Yasuo Nannichi; Tomihiro Hashizume; Toshio Sakurai

doi:10.1063/1.112246

Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy

Hidemi Shigekawa, Haruhiro Oigawa, Koji Miyake, Yoshiaki Aiso, Yasuo Nannichi, Tomihiro Hashizume, Toshio Sakurai

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga₂Se₃-like structure with ordered 1/3 ML Ga vacancies was proposed.

Original language	English
Pages (from-to)	607-609
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	5
DOIs	https://doi.org/10.1063/1.112246
Publication status	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy",

abstract = "An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed.",

author = "Hidemi Shigekawa and Haruhiro Oigawa and Koji Miyake and Yoshiaki Aiso and Yasuo Nannichi and Tomihiro Hashizume and Toshio Sakurai",

year = "1994",

doi = "10.1063/1.112246",

language = "English",

volume = "65",

pages = "607--609",

journal = "Applied Physics Letters",

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T1 - Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy

AU - Shigekawa, Hidemi

AU - Oigawa, Haruhiro

AU - Miyake, Koji

AU - Aiso, Yoshiaki

AU - Nannichi, Yasuo

AU - Hashizume, Tomihiro

AU - Sakurai, Toshio

PY - 1994

Y1 - 1994

N2 - An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed.

AB - An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed.

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