Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy

Hidemi Shigekawa, Haruhiro Oigawa, Koji Miyake, Yoshiaki Aiso, Yasuo Nannichi, Tomihiro Hashizume, Toshio Sakurai

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed.

Original languageEnglish
Pages (from-to)607-609
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy'. Together they form a unique fingerprint.

Cite this