Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy

Hidemi Shigekawa, Haruhiro Oigawa, Koji Miyake, Yoshiaki Aiso, Yasuo Nannichi, Tomihiro Hashizume, Toshio Sakurai

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    16 Citations (Scopus)


    An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed.

    Original languageEnglish
    Pages (from-to)607-609
    Number of pages3
    JournalApplied Physics Letters
    Issue number5
    Publication statusPublished - 1994

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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