Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy

Eriko Sano, Yoshiro Hirayama, Yoshiji Horikoshi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Using elementary Se we grew Se-doped GaAs films on GaAs (111), (411), (711) and (100) substrates by molecular beam epitaxy. The films grown on all the high-index substrates showed n-type conduction and the maximum carrier concentration reached 2.1×1019 cm-3 for the film grown on the (411)B substrate. The carrier concentration began to saturate at a Se concentration near 1019 cm-3 but continued to increase up to a Se concentration of 2×1020 cm-3. Above 2×1020 cm-3 Se concentration, slow reduction of the carrier concentration was observed. We obtained excellent surface morphology when n-type GaAs films were grown on (411)A and (711)B substrates even at a Se concentration of 7×1020 cm-3.

Original languageEnglish
Pages (from-to)743-747
Number of pages5
JournalMicroelectronics Journal
Issue number8-10
Publication statusPublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


Dive into the research topics of 'Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this