Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy

Eriko Sano; Yoshiro Hirayama; Yoshiji Horikoshi

doi:10.1016/s0026-2692(96)00112-7

Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy

Eriko Sano, Yoshiro Hirayama, Yoshiji Horikoshi

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Using elementary Se we grew Se-doped GaAs films on GaAs (111), (411), (711) and (100) substrates by molecular beam epitaxy. The films grown on all the high-index substrates showed n-type conduction and the maximum carrier concentration reached 2.1×10¹⁹ cm^-3 for the film grown on the (411)B substrate. The carrier concentration began to saturate at a Se concentration near 10¹⁹ cm^-3 but continued to increase up to a Se concentration of 2×10²⁰ cm^-3. Above 2×10²⁰ cm^-3 Se concentration, slow reduction of the carrier concentration was observed. We obtained excellent surface morphology when n-type GaAs films were grown on (411)A and (711)B substrates even at a Se concentration of 7×10²⁰ cm^-3.

Original language	English
Pages (from-to)	743-747
Number of pages	5
Journal	Microelectronics Journal
Volume	28
Issue number	8-10
DOIs	https://doi.org/10.1016/s0026-2692(96)00112-7
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/s0026-2692(96)00112-7

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@article{392b478c78c34bfbbcd8e0900f672bb8,

title = "Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy",

abstract = "Using elementary Se we grew Se-doped GaAs films on GaAs (111), (411), (711) and (100) substrates by molecular beam epitaxy. The films grown on all the high-index substrates showed n-type conduction and the maximum carrier concentration reached 2.1×1019 cm-3 for the film grown on the (411)B substrate. The carrier concentration began to saturate at a Se concentration near 1019 cm-3 but continued to increase up to a Se concentration of 2×1020 cm-3. Above 2×1020 cm-3 Se concentration, slow reduction of the carrier concentration was observed. We obtained excellent surface morphology when n-type GaAs films were grown on (411)A and (711)B substrates even at a Se concentration of 7×1020 cm-3.",

author = "Eriko Sano and Yoshiro Hirayama and Yoshiji Horikoshi",

year = "1997",

doi = "10.1016/s0026-2692(96)00112-7",

language = "English",

volume = "28",

pages = "743--747",

journal = "Microelectronics",

issn = "0026-2692",

publisher = "Elsevier Limited",

number = "8-10",

}

TY - JOUR

T1 - Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy

AU - Sano, Eriko

AU - Hirayama, Yoshiro

AU - Horikoshi, Yoshiji

PY - 1997

Y1 - 1997

N2 - Using elementary Se we grew Se-doped GaAs films on GaAs (111), (411), (711) and (100) substrates by molecular beam epitaxy. The films grown on all the high-index substrates showed n-type conduction and the maximum carrier concentration reached 2.1×1019 cm-3 for the film grown on the (411)B substrate. The carrier concentration began to saturate at a Se concentration near 1019 cm-3 but continued to increase up to a Se concentration of 2×1020 cm-3. Above 2×1020 cm-3 Se concentration, slow reduction of the carrier concentration was observed. We obtained excellent surface morphology when n-type GaAs films were grown on (411)A and (711)B substrates even at a Se concentration of 7×1020 cm-3.

AB - Using elementary Se we grew Se-doped GaAs films on GaAs (111), (411), (711) and (100) substrates by molecular beam epitaxy. The films grown on all the high-index substrates showed n-type conduction and the maximum carrier concentration reached 2.1×1019 cm-3 for the film grown on the (411)B substrate. The carrier concentration began to saturate at a Se concentration near 1019 cm-3 but continued to increase up to a Se concentration of 2×1020 cm-3. Above 2×1020 cm-3 Se concentration, slow reduction of the carrier concentration was observed. We obtained excellent surface morphology when n-type GaAs films were grown on (411)A and (711)B substrates even at a Se concentration of 7×1020 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=30244531960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30244531960&partnerID=8YFLogxK

U2 - 10.1016/s0026-2692(96)00112-7

DO - 10.1016/s0026-2692(96)00112-7

M3 - Article

AN - SCOPUS:30244531960

VL - 28

SP - 743

EP - 747

JO - Microelectronics

JF - Microelectronics

SN - 0026-2692

IS - 8-10

ER -

Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy

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