Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy

Eriko Sano; Yoshiro Hirayama; Yoshiji Horikoshi

doi:10.1016/s0026-2692(96)00112-7

Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy

Eriko Sano, Yoshiro Hirayama, Yoshiji Horikoshi

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Using elementary Se we grew Se-doped GaAs films on GaAs (111), (411), (711) and (100) substrates by molecular beam epitaxy. The films grown on all the high-index substrates showed n-type conduction and the maximum carrier concentration reached 2.1×10¹⁹ cm^-3 for the film grown on the (411)B substrate. The carrier concentration began to saturate at a Se concentration near 10¹⁹ cm^-3 but continued to increase up to a Se concentration of 2×10²⁰ cm^-3. Above 2×10²⁰ cm^-3 Se concentration, slow reduction of the carrier concentration was observed. We obtained excellent surface morphology when n-type GaAs films were grown on (411)A and (711)B substrates even at a Se concentration of 7×10²⁰ cm^-3.

Original language	English
Pages (from-to)	743-747
Number of pages	5
Journal	Microelectronics Journal
Volume	28
Issue number	8-10
DOIs	https://doi.org/10.1016/s0026-2692(96)00112-7
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/s0026-2692(96)00112-7

Fingerprint Dive into the research topics of 'Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this

@article{392b478c78c34bfbbcd8e0900f672bb8,

title = "Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy",

abstract = "Using elementary Se we grew Se-doped GaAs films on GaAs (111), (411), (711) and (100) substrates by molecular beam epitaxy. The films grown on all the high-index substrates showed n-type conduction and the maximum carrier concentration reached 2.1×1019 cm-3 for the film grown on the (411)B substrate. The carrier concentration began to saturate at a Se concentration near 1019 cm-3 but continued to increase up to a Se concentration of 2×1020 cm-3. Above 2×1020 cm-3 Se concentration, slow reduction of the carrier concentration was observed. We obtained excellent surface morphology when n-type GaAs films were grown on (411)A and (711)B substrates even at a Se concentration of 7×1020 cm-3.",

author = "Eriko Sano and Yoshiro Hirayama and Yoshiji Horikoshi",

year = "1997",

doi = "10.1016/s0026-2692(96)00112-7",

language = "English",

volume = "28",

pages = "743--747",

journal = "Microelectronics",

issn = "0026-2692",

publisher = "Elsevier Limited",

number = "8-10",

}

TY - JOUR

T1 - Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy

AU - Sano, Eriko

AU - Hirayama, Yoshiro

AU - Horikoshi, Yoshiji

PY - 1997

Y1 - 1997

N2 - Using elementary Se we grew Se-doped GaAs films on GaAs (111), (411), (711) and (100) substrates by molecular beam epitaxy. The films grown on all the high-index substrates showed n-type conduction and the maximum carrier concentration reached 2.1×1019 cm-3 for the film grown on the (411)B substrate. The carrier concentration began to saturate at a Se concentration near 1019 cm-3 but continued to increase up to a Se concentration of 2×1020 cm-3. Above 2×1020 cm-3 Se concentration, slow reduction of the carrier concentration was observed. We obtained excellent surface morphology when n-type GaAs films were grown on (411)A and (711)B substrates even at a Se concentration of 7×1020 cm-3.

AB - Using elementary Se we grew Se-doped GaAs films on GaAs (111), (411), (711) and (100) substrates by molecular beam epitaxy. The films grown on all the high-index substrates showed n-type conduction and the maximum carrier concentration reached 2.1×1019 cm-3 for the film grown on the (411)B substrate. The carrier concentration began to saturate at a Se concentration near 1019 cm-3 but continued to increase up to a Se concentration of 2×1020 cm-3. Above 2×1020 cm-3 Se concentration, slow reduction of the carrier concentration was observed. We obtained excellent surface morphology when n-type GaAs films were grown on (411)A and (711)B substrates even at a Se concentration of 7×1020 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=30244531960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30244531960&partnerID=8YFLogxK

U2 - 10.1016/s0026-2692(96)00112-7

DO - 10.1016/s0026-2692(96)00112-7

M3 - Article

AN - SCOPUS:30244531960

VL - 28

SP - 743

EP - 747

JO - Microelectronics

JF - Microelectronics

SN - 0026-2692

IS - 8-10

ER -

Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this