Selective scanning tunneling microscope light emission from rutile phase of VO2

Joe Sakai, Masashi Kuwahara, Masaki Hotsuki, Satoshi Katano, Yoichi Uehara

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3 Citations (Scopus)


We observed scanning tunneling microscope light emission (STM-LE) induced by a tunneling current at the gap between an Ag tip and a VO2 thin film, in parallel to scanning tunneling spectroscopy (STS) profiles. The 34 nm thick VO2 film grown on a rutile TiO2 (0 0 1) substrate consisted of both rutile (R)- and monoclinic (M)-structure phases of a few 10 nm-sized domains at room temperature. We found that STM-LE with a certain photon energy of 2.0 eV occurs selectively from R-phase domains of VO2, while no STM-LE was observed from M-phase. The mechanism of STM-LE from R-phase VO2 was determined to be an interband transition process rather than inverse photoemission or inelastic tunneling processes.

Original languageEnglish
Article number385002
JournalJournal of Physics Condensed Matter
Issue number38
Publication statusPublished - 2016 Jul 27


  • VO
  • light emission
  • pulsed laser deposition
  • scanning tunneling microscopy
  • thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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