Abstract
We observed scanning tunneling microscope light emission (STM-LE) induced by a tunneling current at the gap between an Ag tip and a VO2 thin film, in parallel to scanning tunneling spectroscopy (STS) profiles. The 34 nm thick VO2 film grown on a rutile TiO2 (0 0 1) substrate consisted of both rutile (R)- and monoclinic (M)-structure phases of a few 10 nm-sized domains at room temperature. We found that STM-LE with a certain photon energy of 2.0 eV occurs selectively from R-phase domains of VO2, while no STM-LE was observed from M-phase. The mechanism of STM-LE from R-phase VO2 was determined to be an interband transition process rather than inverse photoemission or inelastic tunneling processes.
Original language | English |
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Article number | 385002 |
Journal | Journal of Physics Condensed Matter |
Volume | 28 |
Issue number | 38 |
DOIs | |
Publication status | Published - 2016 Jul 27 |
Keywords
- VO
- light emission
- pulsed laser deposition
- scanning tunneling microscopy
- thin films
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics