SELECTIVE OXIDE COATING OF SILICON GATE (SELOCS).

Hideo Sunami, Mitsumasa Koyanagi

Research output: Contribution to conferencePaperpeer-review

7 Citations (Scopus)

Abstract

A novel self-aligned insulation for silicon gates is realized by a new technique of selective oxide coating of silicon gates (SELOCS). This SELOCS utilizes concentration-dependent oxidation and diffusion-defined uniform etching. As the entire surface of a phosphorus-doped polysilicon gate is uniformly covered with its own oxide, SELOCS technology provides a nearly zero registration tolerance between the photoengraving of S&D contact holes and the gate. Consequently, almost one half of area reduction ratio is obtained without requiring finer pattern lithography.

Original languageEnglish
Pages255-260
Number of pages6
Publication statusPublished - 1979 Jan 1
EventProc Conf Solid State Devices 10th - Tokyo, Jpn
Duration: 1978 Aug 291978 Aug 30

Other

OtherProc Conf Solid State Devices 10th
CityTokyo, Jpn
Period78/8/2978/8/30

ASJC Scopus subject areas

  • Engineering(all)

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