SELECTIVE OXIDE COATING OF SILICON GATE (SELOCS).

A novel self-aligned insulation for silicon gates is realized by a new technique of selective oxide coating of silicon gates (SELOCS). This SELOCS utilizes concentration-dependent oxidation and diffusion-defined uniform etching. As the entire surface of a phosphorus-doped polysilicon gate is uniformly covered with its own oxide, SELOCS technology provides a nearly zero registration tolerance between the photoengraving of S&D contact holes and the gate. Consequently, almost one half of area reduction ratio is obtained without requiring finer pattern lithography.