Selective oxidation and Resistivity reduction of Cu-Mn alloy films for self-forming barrier process

Jun Iijima, Yoshito Fujii, Koji Neishi, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optimum conditions of annealing atmosphere and temperature for the reduction of Mn content from the Cu-Mn alloy layer in Cu-Mn self-forming barrier process were investigated. Mn was selectively oxidized at the surface by annealing in Ar gas containing an impurity level of O2 (<0.01ppm). Resistivity of the film was decreased to 2.0 μΩcm after annealing. On the other hand, internal oxidation of Cu-Mn alloy was observed with no external protective surface oxide layer in Ar containing more than 10 ppm of O 2. An optimum oxygen concentration is found to be in between 0.01 and 10 ppm in latm of Ar gas at 350 °C.

Original languageEnglish
Title of host publicationMaterials and Processes for Advanced Interconnects for Microelectronics
Pages47-52
Number of pages6
Publication statusPublished - 2008 Dec 1
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2008 Mar 242008 Mar 28

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1079
ISSN (Print)0272-9172

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period08/3/2408/3/28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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