Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes

We demonstrated the effects of growth conditions such as growth pressure and growth temperature during the selective growth of InGaN/GaN multiple quantum wells (MQWs) on semipolar GaN microstripes on Si substrates. Grown layers exhibited the ridge growth, which indicates the thickness fluctuation, owing to the source supply from the apexes of the GaN microstructure. Ridge growth was suppressed by increasing growth pressure and decreasing growth temperature. Cathode luminescence (CL) analysis showed uniform luminescence. As a result, high pressure and low temperature are suitable for obtaining uniform heterostructures in the selective growth of InGaN/GaN MQWs on GaN microstripes.