Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes

Tomoyuki Tanikawa, Tasuku Murase, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We demonstrated the effects of growth conditions such as growth pressure and growth temperature during the selective growth of InGaN/GaN multiple quantum wells (MQWs) on semipolar GaN microstripes on Si substrates. Grown layers exhibited the ridge growth, which indicates the thickness fluctuation, owing to the source supply from the apexes of the GaN microstructure. Ridge growth was suppressed by increasing growth pressure and decreasing growth temperature. Cathode luminescence (CL) analysis showed uniform luminescence. As a result, high pressure and low temperature are suitable for obtaining uniform heterostructures in the selective growth of InGaN/GaN MQWs on GaN microstripes.

Original languageEnglish
Pages (from-to)2038-2040
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number7-8
DOIs
Publication statusPublished - 2011 Jul

Keywords

  • InGaN
  • MOVPE
  • Nitride semiconductor
  • Selective growth
  • Semipolar

ASJC Scopus subject areas

  • Condensed Matter Physics

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