Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

Yutaka Oyama, Piotr Plotka, Jun ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

This paper reports the effects of low temperature surface treatment on the GaAs regrown interface quality prepared by photo-stimulated molecular layer epitaxy. The regrown diode characteristics are investigated as functions of treatment temperature, exposing AsH3 pressure and duration. Optimized surface treatment gives a good regrown interface even at low temperatures of {reversed tilde} 480°C compared with conventional high temperature treatment at {reversed tilde} 600°C. The surface treatment mechanism is also discussed in combination with the results of X-ray photo-emission spectroscopy (XPS) and quadrupole mass analysis (QMS). Low temperature surface treatment is successfully applied to the ISIT fabrication with a channel length of 1800-100 Å having a few monolayer p+ barrier layer thickness, which shows the DC transconductance gm as high as 1500 mS/mm with good reproducibility.

Original languageEnglish
Pages (from-to)41-45
Number of pages5
JournalApplied Surface Science
Volume82-83
Issue numberC
DOIs
Publication statusPublished - 1994 Dec 2
Externally publishedYes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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