Selective growth of GaAs microcrystals grown on Se-terminated GaAlAs surface for the quantum well box structure

Toyohiro Chikyow, Nobuyuki Koguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A selective growth of GaAs microcrystals was demonstrated on a Se-terminated GaAlAs surface. Ga molecules were supplied to the Se-terminated GaAlAs surface at first. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. After the following As molecule supply to the surface, a selective GaAs microcrystal growth from Ga droplets was observed. The cross sectional investigations by the high resolution electron microscope revealed epitaxial growth of GaAs microcrystals with (111) facets and a possibility of (GaAl)2Se3 layer formation at the GaAs/Se-terminated GaAlAs interface.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages765-770
Number of pages6
ISBN (Print)1558991786
Publication statusPublished - 1993 Jan 1
Externally publishedYes
EventProceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA
Duration: 1992 Nov 301992 Dec 4

Publication series

NameMaterials Research Society Symposium Proceedings
Volume283
ISSN (Print)0272-9172

Other

OtherProceedings of the Second Symposium on Dynamics in Small Confining Systems
CityBoston, MA, USA
Period92/11/3092/12/4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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