A selective growth of GaAs micro crystal was demonstrated on a Se-terminated GaAlAs-surface. At first, Ga molecules were supplied to the Se-terminated GaAlAs surface to form Ga droplets. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. In the following As molecule supply to the surface, GaAs micro crystals were observed to grow selectively from Ga droplets on the surface. The cross sectional investigations by the high resolution electron microscope revealed that a epitaxial growth of GaAs with (111) facets and a possibility of Ga2Se3 layer formation at the GaAs/Se-terminated GaAlAs interface.
|Number of pages||3|
|Publication status||Published - 1992 Dec 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas