Selective growth of GaAs micro crystals on a Se-terminated GaAlAs surface from Ga droplets for the quantum well box structure

Toyohiro Chikyo, Nobuyuki Koguchi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

A selective growth of GaAs micro crystal was demonstrated on a Se-terminated GaAlAs-surface. At first, Ga molecules were supplied to the Se-terminated GaAlAs surface to form Ga droplets. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. In the following As molecule supply to the surface, GaAs micro crystals were observed to grow selectively from Ga droplets on the surface. The cross sectional investigations by the high resolution electron microscope revealed that a epitaxial growth of GaAs with (111) facets and a possibility of Ga2Se3 layer formation at the GaAs/Se-terminated GaAlAs interface.

Original languageEnglish
Pages582-584
Number of pages3
Publication statusPublished - 1992 Dec 1
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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    Chikyo, T., & Koguchi, N. (1992). Selective growth of GaAs micro crystals on a Se-terminated GaAlAs surface from Ga droplets for the quantum well box structure. 582-584. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .