Selective growth of Fe3O4 and γ-Fe2O 3 films with reactive magnetron sputtering

H. Yanagihara, M. Myoka, D. Isaka, Tomohiko Niizeki, K. Mibu, E. Kita

    Research output: Contribution to journalArticlepeer-review

    53 Citations (Scopus)


    A selective method for growing high-quality spinel-type epitaxial Fe 3O4(0 0 1) or γ-Fe2O3(0 0 1) films was developed using conventional planar-type sputtering by controlling the flow rate of oxygen gas . Although magnetization of the oxide films is close to that of Fe3O4 or γ-Fe2O3 for all , the room-temperature resistivity and the Fe3+ and Fe2.5+ composition ratios of the films are dependent on . The films for and are identified as Fe3O4 and γ-Fe2O3 films, respectively. All the results suggest that Fe3O4 films are obtained only when sputtered in the metal mode, and γ-Fe2O3 films are obtained in the oxide mode.

    Original languageEnglish
    Article number175004
    JournalJournal of Physics D: Applied Physics
    Issue number17
    Publication statusPublished - 2013 May 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Acoustics and Ultrasonics
    • Surfaces, Coatings and Films


    Dive into the research topics of 'Selective growth of Fe3O4 and γ-Fe2O 3 films with reactive magnetron sputtering'. Together they form a unique fingerprint.

    Cite this