Abstract
We succeeded in the fabrication of high-aspect-ratio (length to width) Cu nanowires of less than 10 nm width and 0.5 nm height along atomic step edge lines on Si(111) substrate. The fabrication procedure consisted of two wet process steps: (1) flattening of the surface roughness to an atomic level by immersing Si(111) wafers in ultralow-dissolved-oxygen water (LOW) and (2) Cu nanowire formation by immersion in LOW containing 100 ppb Cu ions for 100 s at room temperature. The selective growth of the Cu nanowires at the step edges indicates that Cu adsorption sites could be formed there during the flattening stage.
Original language | English |
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Pages (from-to) | L1210-L1212 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 42 |
Issue number | 10 A |
DOIs | |
Publication status | Published - 2003 Oct 1 |
Externally published | Yes |
Keywords
- AFM
- Atomic step
- Cu
- Electrochemical
- Electroless deposition
- Nanowire
- Si
- Surface
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)