Selective Growth of Cu Nanowires on Si(111) Substrates

Norio Tokuda, Daisuke Hojo, Satoshi Yamasaki, Kazushi Miki, Kikuo Yamabe

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


We succeeded in the fabrication of high-aspect-ratio (length to width) Cu nanowires of less than 10 nm width and 0.5 nm height along atomic step edge lines on Si(111) substrate. The fabrication procedure consisted of two wet process steps: (1) flattening of the surface roughness to an atomic level by immersing Si(111) wafers in ultralow-dissolved-oxygen water (LOW) and (2) Cu nanowire formation by immersion in LOW containing 100 ppb Cu ions for 100 s at room temperature. The selective growth of the Cu nanowires at the step edges indicates that Cu adsorption sites could be formed there during the flattening stage.

Original languageEnglish
Pages (from-to)L1210-L1212
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number10 A
Publication statusPublished - 2003 Oct 1
Externally publishedYes


  • AFM
  • Atomic step
  • Cu
  • Electrochemical
  • Electroless deposition
  • Nanowire
  • Si
  • Surface

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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