Selective growth of carbon nanotubes for nano electro mechanical device

H. Miyashita; Takahito Ono; Ngoc Minh Phan Ngoc Minh; Masayoshi Esashi

Selective growth of carbon nanotubes for nano electro mechanical device

H. Miyashita, Takahito Ono, Ngoc Minh Phan Ngoc Minh, Masayoshi Esashi

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, we present the growth techniques of carbon nanotubes and its application for nano-electromechanical devices. Several methods were attempted for the selective growth of the carbon nanotubes. Catalyzed metal (Ni) patterning and the following hot-filament chemical vapor deposition enable to glow carbon nanotubes on the metal pattern formed on quartz glass. However, no carbon nanotubes are grown on a flat silicon substrate using this method. It is found that the high electrostatic field with a negative substrate bias enhances the growth of the carbon nanotubes. This growth enhancement effect is applied to fabricate single carbon nanotube tip on silicon for scanning probe microscopy.

Original language	English
Pages	301-304
Number of pages	4
Publication status	Published - 2001 Jan 1
Event	14th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2001) - Interlaken, Switzerland Duration: 2001 Jan 21 → 2001 Jan 25

Other

Other	14th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2001)
Country	Switzerland
City	Interlaken
Period	01/1/21 → 01/1/25

ASJC Scopus subject areas

Control and Systems Engineering
Mechanical Engineering
Electrical and Electronic Engineering

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abstract = "In this paper, we present the growth techniques of carbon nanotubes and its application for nano-electromechanical devices. Several methods were attempted for the selective growth of the carbon nanotubes. Catalyzed metal (Ni) patterning and the following hot-filament chemical vapor deposition enable to glow carbon nanotubes on the metal pattern formed on quartz glass. However, no carbon nanotubes are grown on a flat silicon substrate using this method. It is found that the high electrostatic field with a negative substrate bias enhances the growth of the carbon nanotubes. This growth enhancement effect is applied to fabricate single carbon nanotube tip on silicon for scanning probe microscopy.",

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AU - Phan Ngoc Minh, Ngoc Minh

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N2 - In this paper, we present the growth techniques of carbon nanotubes and its application for nano-electromechanical devices. Several methods were attempted for the selective growth of the carbon nanotubes. Catalyzed metal (Ni) patterning and the following hot-filament chemical vapor deposition enable to glow carbon nanotubes on the metal pattern formed on quartz glass. However, no carbon nanotubes are grown on a flat silicon substrate using this method. It is found that the high electrostatic field with a negative substrate bias enhances the growth of the carbon nanotubes. This growth enhancement effect is applied to fabricate single carbon nanotube tip on silicon for scanning probe microscopy.

AB - In this paper, we present the growth techniques of carbon nanotubes and its application for nano-electromechanical devices. Several methods were attempted for the selective growth of the carbon nanotubes. Catalyzed metal (Ni) patterning and the following hot-filament chemical vapor deposition enable to glow carbon nanotubes on the metal pattern formed on quartz glass. However, no carbon nanotubes are grown on a flat silicon substrate using this method. It is found that the high electrostatic field with a negative substrate bias enhances the growth of the carbon nanotubes. This growth enhancement effect is applied to fabricate single carbon nanotube tip on silicon for scanning probe microscopy.

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