Abstract
Carbon nanostructures (CN) have been selectively grown directly onto the top of nickel ion implanted nanopyramid array (Ni NPA) by the plasma enhanced chemical vapor deposition (p-CVD) technique. Firstly, NPA were fabricated by taking advantage of the anisotropic etching characteristics of silicon in hydrazine (N 2 H 4 H 2 O); where the ion implanted area acted as a mask for hydrazine etching. Secondly, carbon nanostructures were grown on Ni NPA by feeding methane/hydrogen (CH 4 /H 2 ) mixtures into p-CVD reactor. The change of concentration ratio of methane to hydrogen dramatically affected the growth selectivity of CN. Methane concentrations lower than 20%, promoted the selective growth of CN on the top of Ni NPA. Morphology and chemical nature of grown species were studied by employing scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 72-77 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 234 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2004 Jul 15 |
| Externally published | Yes |
| Event | The Ninth International Conference on the Formation of Semicon - Madrid, Spain Duration: 2003 Sep 15 → 2003 Sep 19 |
Keywords
- Carbon nanostructures
- Focused ion beam
- Nanopyramid array
- Ni
- Selectivity
- Single ion implantation
- p-CVD
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films