TY - JOUR
T1 - Selective growth of carbon nanostructures on nickel implanted nanopyramid array
AU - Ferrer, D.
AU - Shinada, T.
AU - Tanii, T.
AU - Kurosawa, J.
AU - Zhong, G.
AU - Kubo, Y.
AU - Okamoto, S.
AU - Kawarada, H.
AU - Ohdomari, I.
N1 - Funding Information:
This work is supported by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology, and by a Grant for the Promotion of the Advancement of education and research in Graduate Schools from the Promotion and Mutual Aid Corporation for Private Schools of Japan.
PY - 2004/7/15
Y1 - 2004/7/15
N2 - Carbon nanostructures (CN) have been selectively grown directly onto the top of nickel ion implanted nanopyramid array (Ni NPA) by the plasma enhanced chemical vapor deposition (p-CVD) technique. Firstly, NPA were fabricated by taking advantage of the anisotropic etching characteristics of silicon in hydrazine (N 2 H 4 H 2 O); where the ion implanted area acted as a mask for hydrazine etching. Secondly, carbon nanostructures were grown on Ni NPA by feeding methane/hydrogen (CH 4 /H 2 ) mixtures into p-CVD reactor. The change of concentration ratio of methane to hydrogen dramatically affected the growth selectivity of CN. Methane concentrations lower than 20%, promoted the selective growth of CN on the top of Ni NPA. Morphology and chemical nature of grown species were studied by employing scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy, respectively.
AB - Carbon nanostructures (CN) have been selectively grown directly onto the top of nickel ion implanted nanopyramid array (Ni NPA) by the plasma enhanced chemical vapor deposition (p-CVD) technique. Firstly, NPA were fabricated by taking advantage of the anisotropic etching characteristics of silicon in hydrazine (N 2 H 4 H 2 O); where the ion implanted area acted as a mask for hydrazine etching. Secondly, carbon nanostructures were grown on Ni NPA by feeding methane/hydrogen (CH 4 /H 2 ) mixtures into p-CVD reactor. The change of concentration ratio of methane to hydrogen dramatically affected the growth selectivity of CN. Methane concentrations lower than 20%, promoted the selective growth of CN on the top of Ni NPA. Morphology and chemical nature of grown species were studied by employing scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy, respectively.
KW - Carbon nanostructures
KW - Focused ion beam
KW - Nanopyramid array
KW - Ni
KW - Selectivity
KW - Single ion implantation
KW - p-CVD
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U2 - 10.1016/j.apsusc.2004.05.180
DO - 10.1016/j.apsusc.2004.05.180
M3 - Conference article
AN - SCOPUS:3342875879
VL - 234
SP - 72
EP - 77
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
T2 - The Ninth International Conference on the Formation of Semicon
Y2 - 15 September 2003 through 19 September 2003
ER -