Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gases

Shin ichi Kobayashi, Min Lin Cheng, Armin Kohlhase, Taketoshi Sato, Junichi Murota, Nobou Mikoshiba

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

Low pressure chemical vapor deposition (LPCVD) experiments of Ge are presented. The results show that Ge epitaxy is possible by the LPCVD technique at low temperatures, if high-purity reactive gases and ultrahigh vacuum (UHV) compatible CVD equipment is used. Epitaxial films can be grown for several deposition parameter combinations. At low GeH4 pressures facet formation can be observed, which originates from a stepflow dominated growth mechanism. At higher partial pressures plain surfaces are obtained due to dangling bond dependent growth, which is verified in a comparison between several Si substrate orientations. Ge CVD reveals perfect Si/SiO2 selectivity and can, therefore, be used as a contact hole filling method as shown by Ge plugs in contact holes.

Original languageEnglish
Pages (from-to)259-262
Number of pages4
JournalJournal of Crystal Growth
Volume99
Issue number1-4
DOIs
Publication statusPublished - 1990 Jan

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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