Abstract
Deposition characteristics of Ge using thermal decomposition of GeH 4 are studied. The deposition rate of Ge in a surface reaction region at temperatures below 410°C is formulated as a function of the deposition temperature and GeH4 partial pressure. Selective deposition of Ge occurs reproducibly in the lower temperature range below 410°C. The cause of the suppression of selectivity and epitaxial growth at deposition temperatures above 450°C is confirmed as oxide contamination on the substrate.
Original language | English |
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Pages (from-to) | 863-865 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 47 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1985 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)