Selective Ge deposition on Si using thermal decomposition of GeH 4

Hiromu Ishii, Yasuo Takahashi, Junichi Murota

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41 Citations (Scopus)

Abstract

Deposition characteristics of Ge using thermal decomposition of GeH 4 are studied. The deposition rate of Ge in a surface reaction region at temperatures below 410°C is formulated as a function of the deposition temperature and GeH4 partial pressure. Selective deposition of Ge occurs reproducibly in the lower temperature range below 410°C. The cause of the suppression of selectivity and epitaxial growth at deposition temperatures above 450°C is confirmed as oxide contamination on the substrate.

Original languageEnglish
Pages (from-to)863-865
Number of pages3
JournalApplied Physics Letters
Volume47
Issue number8
DOIs
Publication statusPublished - 1985

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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