Selective ge cvd as a via hole filling method and self-aligned impurity diffusion microsource in si processing

Min Lin Cheng, Armin Kohlhase, Taketoshi Sato, Shin Ichi Kobayashi, Junichi Murota, Nobuo Mikoshiba

Research output: Contribution to journalArticlepeer-review

Abstract

Low-pressure chemical vapor deposition (LPCVD) with high-purity reactive, carrier, and purge gases was used to deposit germanium on silicon. The process was found to be perfectly Si/SiO2-selective at temperatures as low as 350°C, and Ge was used as a via hole filling material. Kelvin structures were fabricated to test the resistivities. Ge plugs were used to contact n-p diodes to check the gettering and diffusion source capabilities of doped Ge as a contact material. The results reveal new applications for Ge CVD in low-temperature ULSI processing and show compatibility with conventional Si technology.

Original languageEnglish
Pages (from-to)L2054-L2056
JournalJapanese journal of applied physics
Volume28
Issue number11 A
DOIs
Publication statusPublished - 1989 Jan 1

Keywords

  • Contact resistivities
  • Diffusion coefficients
  • Ge via hole fillirg
  • Ge-contacted n-p diodes
  • Low-pressure chemical vapor deposition
  • Selective Ge epitaxy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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