Selective ge cvd as a via hole filling method and self-aligned impurity diffusion microsource in si processing

Min Lin Cheng; Armin Kohlhase; Taketoshi Sato; Shin Ichi Kobayashi; Junichi Murota; Nobuo Mikoshiba

doi:10.1143/JJAP.28.L2054

Selective ge cvd as a via hole filling method and self-aligned impurity diffusion microsource in si processing

Min Lin Cheng, Armin Kohlhase, Taketoshi Sato, Shin Ichi Kobayashi, Junichi Murota, Nobuo Mikoshiba

Research output: Contribution to journal › Article › peer-review

Abstract

Low-pressure chemical vapor deposition (LPCVD) with high-purity reactive, carrier, and purge gases was used to deposit germanium on silicon. The process was found to be perfectly Si/SiO₂-selective at temperatures as low as 350°C, and Ge was used as a via hole filling material. Kelvin structures were fabricated to test the resistivities. Ge plugs were used to contact n-p diodes to check the gettering and diffusion source capabilities of doped Ge as a contact material. The results reveal new applications for Ge CVD in low-temperature ULSI processing and show compatibility with conventional Si technology.

Original language	English
Pages (from-to)	L2054-L2056
Journal	Japanese journal of applied physics
Volume	28
Issue number	11 A
DOIs	https://doi.org/10.1143/JJAP.28.L2054
Publication status	Published - 1989 Nov
Externally published	Yes

Keywords

Contact resistivities
Diffusion coefficients
Ge via hole fillirg
Ge-contacted n-p diodes
Low-pressure chemical vapor deposition
Selective Ge epitaxy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.28.L2054

Cite this

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title = "Selective ge cvd as a via hole filling method and self-aligned impurity diffusion microsource in si processing",

abstract = "Low-pressure chemical vapor deposition (LPCVD) with high-purity reactive, carrier, and purge gases was used to deposit germanium on silicon. The process was found to be perfectly Si/SiO2-selective at temperatures as low as 350°C, and Ge was used as a via hole filling material. Kelvin structures were fabricated to test the resistivities. Ge plugs were used to contact n-p diodes to check the gettering and diffusion source capabilities of doped Ge as a contact material. The results reveal new applications for Ge CVD in low-temperature ULSI processing and show compatibility with conventional Si technology.",

keywords = "Contact resistivities, Diffusion coefficients, Ge via hole fillirg, Ge-contacted n-p diodes, Low-pressure chemical vapor deposition, Selective Ge epitaxy",

author = "Cheng, {Min Lin} and Armin Kohlhase and Taketoshi Sato and Kobayashi, {Shin Ichi} and Junichi Murota and Nobuo Mikoshiba",

year = "1989",

month = nov,

doi = "10.1143/JJAP.28.L2054",

language = "English",

volume = "28",

pages = "L2054--L2056",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11 A",

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T1 - Selective ge cvd as a via hole filling method and self-aligned impurity diffusion microsource in si processing

AU - Cheng, Min Lin

AU - Kohlhase, Armin

AU - Sato, Taketoshi

AU - Kobayashi, Shin Ichi

AU - Murota, Junichi

AU - Mikoshiba, Nobuo

PY - 1989/11

Y1 - 1989/11

N2 - Low-pressure chemical vapor deposition (LPCVD) with high-purity reactive, carrier, and purge gases was used to deposit germanium on silicon. The process was found to be perfectly Si/SiO2-selective at temperatures as low as 350°C, and Ge was used as a via hole filling material. Kelvin structures were fabricated to test the resistivities. Ge plugs were used to contact n-p diodes to check the gettering and diffusion source capabilities of doped Ge as a contact material. The results reveal new applications for Ge CVD in low-temperature ULSI processing and show compatibility with conventional Si technology.

AB - Low-pressure chemical vapor deposition (LPCVD) with high-purity reactive, carrier, and purge gases was used to deposit germanium on silicon. The process was found to be perfectly Si/SiO2-selective at temperatures as low as 350°C, and Ge was used as a via hole filling material. Kelvin structures were fabricated to test the resistivities. Ge plugs were used to contact n-p diodes to check the gettering and diffusion source capabilities of doped Ge as a contact material. The results reveal new applications for Ge CVD in low-temperature ULSI processing and show compatibility with conventional Si technology.

KW - Contact resistivities

KW - Diffusion coefficients

KW - Ge via hole fillirg

KW - Ge-contacted n-p diodes

KW - Low-pressure chemical vapor deposition

KW - Selective Ge epitaxy

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Selective ge cvd as a via hole filling method and self-aligned impurity diffusion microsource in si processing

Abstract

Keywords

ASJC Scopus subject areas

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