TY - JOUR
T1 - Selective ge cvd as a via hole filling method and self-aligned impurity diffusion microsource in si processing
AU - Cheng, Min Lin
AU - Kohlhase, Armin
AU - Sato, Taketoshi
AU - Kobayashi, Shin Ichi
AU - Murota, Junichi
AU - Mikoshiba, Nobuo
PY - 1989/11
Y1 - 1989/11
N2 - Low-pressure chemical vapor deposition (LPCVD) with high-purity reactive, carrier, and purge gases was used to deposit germanium on silicon. The process was found to be perfectly Si/SiO2-selective at temperatures as low as 350°C, and Ge was used as a via hole filling material. Kelvin structures were fabricated to test the resistivities. Ge plugs were used to contact n-p diodes to check the gettering and diffusion source capabilities of doped Ge as a contact material. The results reveal new applications for Ge CVD in low-temperature ULSI processing and show compatibility with conventional Si technology.
AB - Low-pressure chemical vapor deposition (LPCVD) with high-purity reactive, carrier, and purge gases was used to deposit germanium on silicon. The process was found to be perfectly Si/SiO2-selective at temperatures as low as 350°C, and Ge was used as a via hole filling material. Kelvin structures were fabricated to test the resistivities. Ge plugs were used to contact n-p diodes to check the gettering and diffusion source capabilities of doped Ge as a contact material. The results reveal new applications for Ge CVD in low-temperature ULSI processing and show compatibility with conventional Si technology.
KW - Contact resistivities
KW - Diffusion coefficients
KW - Ge via hole fillirg
KW - Ge-contacted n-p diodes
KW - Low-pressure chemical vapor deposition
KW - Selective Ge epitaxy
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U2 - 10.1143/JJAP.28.L2054
DO - 10.1143/JJAP.28.L2054
M3 - Article
AN - SCOPUS:0024770744
VL - 28
SP - L2054-L2056
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11 A
ER -