Selective ge cvd as a via hole filling method and self-aligned impurity diffusion microsource in si processing

Min Lin Cheng; Armin Kohlhase; Taketoshi Sato; Shin Ichi Kobayashi; Junichi Murota; Nobuo Mikoshiba

doi:10.1143/JJAP.28.L2054

Selective ge cvd as a via hole filling method and self-aligned impurity diffusion microsource in si processing

Min Lin Cheng, Armin Kohlhase, Taketoshi Sato, Shin Ichi Kobayashi, Junichi Murota, Nobuo Mikoshiba

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

Abstract

Low-pressure chemical vapor deposition (LPCVD) with high-purity reactive, carrier, and purge gases was used to deposit germanium on silicon. The process was found to be perfectly Si/SiO₂-selective at temperatures as low as 350°C, and Ge was used as a via hole filling material. Kelvin structures were fabricated to test the resistivities. Ge plugs were used to contact n-p diodes to check the gettering and diffusion source capabilities of doped Ge as a contact material. The results reveal new applications for Ge CVD in low-temperature ULSI processing and show compatibility with conventional Si technology.

Original language	English
Pages (from-to)	L2054-L2056
Journal	Japanese journal of applied physics
Volume	28
Issue number	11 A
DOIs	https://doi.org/10.1143/JJAP.28.L2054
Publication status	Published - 1989 Jan 1

Keywords

Contact resistivities
Diffusion coefficients
Ge via hole fillirg
Ge-contacted n-p diodes
Low-pressure chemical vapor deposition
Selective Ge epitaxy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Selective ge cvd as a via hole filling method and self-aligned impurity diffusion microsource in si processing. / Cheng, Min Lin; Kohlhase, Armin; Sato, Taketoshi; Kobayashi, Shin Ichi; Murota, Junichi; Mikoshiba, Nobuo.

In: Japanese journal of applied physics, Vol. 28, No. 11 A, 01.01.1989, p. L2054-L2056.

Research output: Contribution to journal › Article › peer-review

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abstract = "Low-pressure chemical vapor deposition (LPCVD) with high-purity reactive, carrier, and purge gases was used to deposit germanium on silicon. The process was found to be perfectly Si/SiO2-selective at temperatures as low as 350°C, and Ge was used as a via hole filling material. Kelvin structures were fabricated to test the resistivities. Ge plugs were used to contact n-p diodes to check the gettering and diffusion source capabilities of doped Ge as a contact material. The results reveal new applications for Ge CVD in low-temperature ULSI processing and show compatibility with conventional Si technology.",

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AU - Murota, Junichi

AU - Mikoshiba, Nobuo

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AB - Low-pressure chemical vapor deposition (LPCVD) with high-purity reactive, carrier, and purge gases was used to deposit germanium on silicon. The process was found to be perfectly Si/SiO2-selective at temperatures as low as 350°C, and Ge was used as a via hole filling material. Kelvin structures were fabricated to test the resistivities. Ge plugs were used to contact n-p diodes to check the gettering and diffusion source capabilities of doped Ge as a contact material. The results reveal new applications for Ge CVD in low-temperature ULSI processing and show compatibility with conventional Si technology.

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